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NJL21193DG

Onsemi

NJL21193DG by Onsemi

NJL21193DG by Onsemi is a PNP BJT transistor with 250V VCE, 16A IC, and 4MHz fT. Ideal for amplifier applications due to its single configuration with built-in diode. Package style is flange mount with 5 terminals in a rectangular shape.

Median Price

$1.600

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 2,937 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.460

10k+ parts

-

2,937

-

-

$1.460

-

Rochester

USA . 835 parts In-Stock

1+ parts

-

100+ parts

$1.600

1k+ parts

$1.330

10k+ parts

$1.180

835

-

$1.600

$1.330

$1.180

Verical

USA . 835 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.663

10k+ parts

$1.475

835

-

-

$1.663

$1.475

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,121 parts In-Stock

1+ parts

$1.244

100+ parts

-

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2,121

$1.244

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Chip Stock

USA . 17,000 parts In-Stock

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17,000

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Vyrian

USA . 7,271 parts In-Stock

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7,271

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 2,358 parts In-Stock

1+ parts

$1.110

100+ parts

-

1k+ parts

-

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2,358

$1.110

-

-

-

Corphita

USA . 2,467 parts In-Stock

1+ parts

$1.179

100+ parts

-

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2,467

$1.179

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Corohmni

South Africa . 422 parts In-Stock

1+ parts

$1.310

100+ parts

-

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422

$1.310

-

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AZTECH Wire

Italy . 1,206 parts In-Stock

1+ parts

$17.640

100+ parts

-

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1,206

$17.640

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Problanco Electronics

Mexico . 5,948 parts In-Stock

1+ parts

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5,948

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Microchip USA

USA . 5,246 parts In-Stock

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5,246

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QUARKTWIN TECHNOLOGY LTD

USA . 3,402 parts In-Stock

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3,402

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Continental Prestige Electronics

USA . 2,937 parts In-Stock

1+ parts

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100+ parts

$1.180

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2,937

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$1.180

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TANS Electronics

Latvia . 2,606 parts In-Stock

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2,606

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Kulean Microsystems

USA . 1,562 parts In-Stock

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1,562

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SupplyDigital Components

Austria . 1,285 parts In-Stock

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1,285

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UHIMA Technologies

Türkiye . 271 parts In-Stock

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271

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Overview

Enhance your amplifier projects with the NJL21193DG Power BJT by Onsemi. Known for its superior quality and reliability, Onsemi delivers high-performing transistors that meet industry standards. This PNP transistor with a built-in diode offers enhanced functionality and efficiency, making it ideal for amplifier applications. With a maximum collector-emitter voltage of 250V and a high DC current gain, this transistor provides exceptional performance and durability. Trust Onsemi's NJL21193DG to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-lasting performance.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, offering versatility in circuit design.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by providing a built-in diode, reducing the need for additional components.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in these types of circuits.

Package Shape: RECTANGULAR

Allows for easy integration into circuit boards or systems with limited space.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering and connection to circuit boards, simplifying the manufacturing process.

No. of Terminals: 5

Provides multiple connection points, allowing for versatile circuit configurations.

Package Style (Meter): FLANGE MOUNT

Enables secure mounting of the transistor in a variety of electronic devices or systems.

Minimum DC Current Gain (hFE): 8

Ensures consistent and reliable amplification capabilities in the circuit.

Maximum Collector-Emitter Voltage: 250 V

Can withstand high collector-emitter voltages, making it suitable for a wide range of applications.

Transistor Element Material: SILICON

Offers high performance and reliability due to the properties of silicon material.

Maximum Collector Current (IC): 16 A

Capable of handling high collector currents, making it suitable for power applications.

Terminal Finish: TIN

Provides good electrical conductivity and corrosion resistance for reliable connections.

Terminal Position: SINGLE

Simplifies installation and connection in the circuit, reducing complexity in the design.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during manufacturing processes, ensuring product reliability.

Nominal Transition Frequency (fT): 4 MHz

Ideal for applications requiring high-frequency operation, providing efficient signal amplification.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NJL21193DG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Minimum DC Current Gain (hFE):

8

JESD-30 Code:

R-PSFM-T5

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

5

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NJL21193DG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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