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NJL21194DG

Onsemi

NJL21194DG by Onsemi

NJL21194DG by Onsemi is a NPN BJT transistor with 250V VCE, 16A IC, and 4MHz fT. Ideal for amplifier applications, it features a single configuration with built-in diode in a rectangular flange mount package.

Median Price

$1.460

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,220 parts In-Stock

1+ parts

$1.380

100+ parts

$1.290

1k+ parts

$1.170

10k+ parts

-

3,220

$1.380

$1.290

$1.170

-

Farnell

UK . 3,220 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.460

10k+ parts

-

3,220

-

-

$1.460

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DigiKey

USA . 1,718 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$2.000

10k+ parts

-

1,718

-

-

$2.000

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,119 parts In-Stock

1+ parts

$1.244

100+ parts

-

1k+ parts

-

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2,119

$1.244

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-

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Chip Stock

USA . 61,000 parts In-Stock

1+ parts

-

100+ parts

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61,000

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Vyrian

USA . 5,411 parts In-Stock

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5,411

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 195 parts In-Stock

1+ parts

$1.179

100+ parts

-

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-

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195

$1.179

-

-

-

Corohmni

South Africa . 280 parts In-Stock

1+ parts

$1.310

100+ parts

-

1k+ parts

-

10k+ parts

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280

$1.310

-

-

-

Component Stockers USA

USA . 4,027 parts In-Stock

1+ parts

$1.360

100+ parts

$1.280

1k+ parts

$1.160

10k+ parts

-

4,027

$1.360

$1.280

$1.160

-

Advanced Electronics

New Zealand . 93 parts In-Stock

1+ parts

$2.091

100+ parts

$1.903

1k+ parts

$1.715

10k+ parts

-

93

$2.091

$1.903

$1.715

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Microchip USA

USA . 222 parts In-Stock

1+ parts

$8.190

100+ parts

-

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222

$8.190

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AZTECH Wire

Italy . 928 parts In-Stock

1+ parts

$11.440

100+ parts

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928

$11.440

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-

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SupplyDigital Components

Austria . 7,267 parts In-Stock

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7,267

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Authorized Procurement Solutions

USA . 6,000 parts In-Stock

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6,000

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Problanco Electronics

Mexico . 5,173 parts In-Stock

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5,173

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Kulean Microsystems

USA . 3,405 parts In-Stock

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3,405

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TANS Electronics

Latvia . 3,223 parts In-Stock

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3,223

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Continental Prestige Electronics

USA . 3,220 parts In-Stock

1+ parts

-

100+ parts

$1.180

1k+ parts

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3,220

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$1.180

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UHIMA Technologies

Türkiye . 55 parts In-Stock

1+ parts

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55

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Overview

Unleash the power of innovation with the NJL21194DG by Onsemi, a top-tier manufacturer known for delivering superior quality products. As a Power Bipolar Junction Transistor (BJT), this single NPN transistor with a built-in diode is designed for amplifier applications, offering exceptional performance and reliability. With a maximum collector-emitter voltage of 250V and a peak reflow temperature of 260 °C, this transistor ensures optimal functionality in various electronic devices. Trust Onsemi to provide cutting-edge solutions that exceed expectations and propel your projects to new heights of success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures a lightweight and durable package, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for amplifier applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and saves space by eliminating the need for an additional diode component.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring high performance and reliability in amplification circuits.

Package Shape: RECTANGULAR

The rectangular shape allows for easy integration into circuit designs and efficient use of space on a PCB.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections, making it easier to solder and ensuring reliable connections in the circuit.

No. of Terminals: 5

Having 5 terminals allows for versatile connection options and compatibility with a wide range of circuit designs.

Package Style (Meter): FLANGE MOUNT

The flange mount style allows for easy and secure mounting on a surface, ensuring stability in the circuit.

Minimum DC Current Gain (hFE): 8

A minimum DC current gain of 8 ensures consistent and reliable amplification performance in the circuit.

Maximum Collector-Emitter Voltage: 250 V

With a maximum voltage rating of 250V, this transistor can handle high voltage applications with ease.

Transistor Element Material: SILICON

Silicon material ensures high performance, reliability, and efficiency in amplification circuits.

Maximum Collector Current (IC): 16 A

The high collector current rating of 16A allows for efficient power handling in the circuit.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and corrosion resistance, ensuring long-term reliability in the circuit.

Terminal Position: SINGLE

Single terminal positioning simplifies circuit design and installation, ensuring easy integration into the circuit.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260 °C, this transistor can withstand high-temperature soldering processes.

Nominal Transition Frequency (fT): 4 MHz

A high nominal transition frequency of 4 MHz ensures fast response and high-speed performance in amplification circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NJL21194DG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Minimum DC Current Gain (hFE):

8

JESD-30 Code:

R-PSFM-T5

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

5

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NJL21194DG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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