Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Power Bipolar Junction Transistors (BJT) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as power supplies, motor drives, and welding equipment.The Power BJT is a three-layer device that consists of an emitter, base, and collector region. The emitter and collector are heavily doped, while the base region is lightly doped. The power BJT works by controlling the flow of majority charge carriers (electrons or holes) from the emitter to the collector region through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.Power BJTs are designed to handle high current and voltage levels, and have a low on-resistance and high gain. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.Proper selection and use of Power BJTs are critical to ensure safe and reliable operation of power electronics systems. Power BJTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.
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Selected
MJE13003G
Onsemi
MJE13003G by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 400V, max. collector current of 1.5A, and min. DC current gain of 5. It is used for switching applications due to its high power dissipation capability of 40W in a flange mount package style.
1.5 A
400 V
SINGLE
5
TO-225
R-PSFM-T3
e3
1
3
150 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
260
NPN
40 W
Not Qualified
Other Transistors
NO
TIN
THROUGH-HOLE
SWITCHING
SILICON
10 MHz
MJD42C1G
MJD42C1G by Onsemi is a PNP BJT transistor with 100V VCEO, 6A IC, and 20W power dissipation. Ideal for switching applications, it has a min hFE of 15 and operates up to 150°C. Its through-hole package style makes it suitable for various electronic designs.
COLLECTOR
6 A
100 V
15
R-PSIP-T3
IN-LINE
PNP
20 W
MATTE TIN
30
3 MHz
BUD42D-1G
BUD42D-1G by Onsemi is a NPN BJT transistor with 350V VCE, 4A IC, and 25W Ptot. Ideal for switching applications, it has a single configuration with built-in diode in a plastic/epoxy package suitable for through-hole mounting.
BUILT-IN ANTISATURATION NETWORK
4 A
350 V
SINGLE WITH BUILT-IN DIODE
10
25 W
Tin (Sn)
40
BUB323ZG
BUB323ZG by Onsemi is a NPN Power BJT with Darlington configuration, ideal for switching applications. With a max power dissipation of 150W and max collector-emitter voltage of 350V, it operates b/w -65 to 175°C. This surface-mount transistor has a min DC current gain of 500 and can handle up to 10A collector current.
10 A
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
500
R-PSSO-G2
2
175 Cel
-65 Cel
SMALL OUTLINE
150 W
YES
GULL WING
2 MHz
BUL642D2G
BUL642D2G by Onsemi is a NPN Power BJT with 440V VCEO, 3A IC, and 75W Ptot. Ideal for applications requiring high power dissipation in a compact package. Suitable for use in various electronic devices due to its high collector current and temperature capabilities.
BUILT-IN EFFICIENT ANTISATURATION NETWORK
3 A
440 V
18
TO-220AB
75 W
13 MHz
BUV27G
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 70 W; Maximum Collector Current (IC): 12 A; Maximum Collector-Emitter Voltage: 120 V;
12 A
120 V
70 W
2N3055HG
The Onsemi 2N3055HG is a NPN power BJT with max. collector-emitter voltage of 60V, max. collector current of 15A, and max. power dissipation of 115W. Ideal for switching applications due to its single configuration and high transition frequency of 2.5MHz in a round package shape suitable for flange mount installations.
15 A
60 V
TO-204AA
O-MBFM-P2
200 Cel
METAL
ROUND
115 W
PIN/PEG
BOTTOM
2.5 MHz
2N3442G
The Onsemi 2N3442G is a NPN power BJT with max. collector-emitter voltage of 140V and max. collector current of 10A, ideal for switching applications. It has a min. DC current gain of 7.5 and can dissipate up to 117W power, suitable for high-power requirements in various electronic systems. With a max operating temperature of 200°C, it offers reliable performance in demanding environments.
140 V
7.5
117 W
.08 MHz
2N3772G
2N3772G by Onsemi is a NPN BJT transistor with 150W power dissipation, 60V max collector-emitter voltage, and 20A max collector current. Ideal for switching applications due to its single configuration and -65°C to 200°C operating temperature range.
20 A
.2 MHz
2N4921G
2N4921G by Onsemi is a NPN BJT transistor with max. power dissipation of 30W, max. collector-emitter voltage of 40V, and max. collector current of 3A. It is used for switching applications due to its single configuration and through-hole terminal form in a rectangular package shape.
40 V
30 W
2N5038G
2N5038G by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 90V, max. operating temp. of 200°C, and max. power dissipation of 140W. Ideal for switching applications due to its single configuration and high collector current capability up to 20A at a min DC current gain of 20 (hFE).
90 V
20
140 W
60 MHz
2N5194G
The Onsemi 2N5194G is a PNP power BJT with max. collector-emitter voltage of 60V and max. collector current of 4A. It has a min. DC current gain of 10, making it suitable for switching applications with a max. power dissipation of 40W in a rectangular package style for through-hole mounting.
TO-225AA
2N5302G
The Onsemi 2N5302G is a NPN power BJT with max. collector-emitter voltage of 60V and max. collector current of 30A. It has a min. DC current gain of 5 and can dissipate up to 200W power. Ideal for switching applications, it operates b/w -65 °C to 200°C temperatures with a transition frequency of 2MHz.
30 A
200 W
2N5655G
2N5655G by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 250V and max. power dissipation of 20W. Ideal for switching applications, it has a min. DC current gain of 5 and operates at up to 150°C, making it suitable for various electronic circuits.
.5 A
250 V
2N5657G
The Onsemi 2N5657G is a NPN power BJT with max. collector-emitter voltage of 350V and max. collector current of 0.5A, ideal for switching applications with a max. power dissipation of 20W. Its single configuration and through-hole terminal form make it suitable for various electronic circuits requiring high-speed operation up to 10MHz transition frequency.
2N5684G
Onsemi's 2N5684G is a PNP BJT transistor with max. collector-emitter voltage of 80V, max. current of 50A, and power dissipation of 300W. Ideal for switching applications due to its single configuration and high operating temperature range (-65 to 200 °C).
50 A
80 V
TO-204AE
e1
300 W
TIN SILVER COPPER
2N5883G
Onsemi's 2N5883G is a PNP BJT with max. collector current of 25A and power dissipation of 200W. Ideal for switching applications, it operates at up to 200°C with a max. VCE of 60V. The transistor features a single configuration in round package style, making it suitable for high-power electronic systems.
25 A
4
4 MHz
2N6035G
The Onsemi 2N6035G is a PNP power BJT with a max collector current of 4A and a min DC current gain of 100. It has a max operating temperature of 150 °C, making it suitable for amplifier applications. The transistor features a Darlington configuration with built-in diode and resistor, housed in a plastic/epoxy package with matte tin terminal finish.
100
1.5 W
AMPLIFIER
25 MHz
2N6036G
2N6036G by Onsemi is a PNP power BJT with Darlington configuration, ideal for amplifier applications. It features a max collector-emitter voltage of 80V, max collector current of 4A, and min DC current gain of 100. With a package style of flange mount and operating temp up to 150 °C, it offers high performance in various electronic designs.
2N6039G
2N6039G by Onsemi is a NPN Power BJT with Darlington configuration, ideal for amplifier applications. It features a max collector-emitter voltage of 80V, max collector current of 4A, and min DC current gain of 100. With a package style of flange mount and operating temp up to 150 °C, it offers high performance in power applications.
2N6040G
2N6040G by Onsemi is a PNP power BJT with Darlington configuration, built-in diode, and resistor. It has a max collector-emitter voltage of 60V, max current of 8A, and min DC current gain of 1000. Ideal for switching applications due to its high power dissipation of 75W and operating temp up to 150°C.
LEADFORM OPTIONS ARE AVAILABLE
8 A
1000
2N6042G
2N6042G by Onsemi is a PNP BJT with 100V VCEO, 8A IC, and 75W power dissipation. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor. With an hFE of 1000, it operates b/w -65°C to 150°C in a flange mount package.
2N6107G
2N6107G by Onsemi is a PNP BJT transistor with 40W power dissipation, 70V max collector-emitter voltage, and 7A max collector current. Ideal for switching applications, it has a min hFE of 30 and operates up to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.
7 A
70 V
2N6109G
2N6109G by Onsemi is a PNP power bipolar junction transistor (BJT) with a max collector-emitter voltage of 50V and a max collector current of 7A. It is commonly used for switching applications and has a min DC current gain of 30 (hFE).
50 V
2N6111G
2N6111G by Onsemi is a PNP BJT transistor with max. power dissipation of 40W, max. collector-emitter voltage of 30V, and max. collector current of 7A. It is used for switching applications due to its single configuration and through-hole terminal form in a rectangular package style.
30 V
2N6286G
2N6286G by Onsemi is a PNP power BJT with a max collector current of 20A and a min DC current gain of 100. It features a built-in diode and resistor, making it suitable for amplifier applications. With a max power dissipation of 160W and an operating temperature up to 200 °C, it offers reliable performance in various high-power circuits.
160 W
2N6338G
The Onsemi 2N6338G is a NPN BJT transistor with max. collector-emitter voltage of 100V, max. collector current of 25A, and max. power dissipation of 200W. Ideal for switching applications due to its single configuration and high transition frequency of 40MHz in a round package shape.
12
40 MHz
2N6487G
The Onsemi 2N6487G is a NPN power BJT with max. collector-emitter voltage of 60V and max. collector current of 15A. It has a min. DC current gain of 5, suitable for switching applications with a max. power dissipation of 30W at an operating temp. of 150°C.
5 MHz
2N6490G
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 5 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 15 A;
2N6497G
The Onsemi 2N6497G is a NPN power BJT with max. collector-emitter voltage of 250V, max. collector current of 5A, and max. power dissipation of 80W. Ideal for switching applications due to its single configuration and high transition frequency of 5MHz in a rectangular package style.
5 A
80 W
BD159G
The Onsemi BD159G is a NPN BJT transistor with 3 terminals and a max power dissipation of 20W. It has a min DC current gain of 30, operates at up to 150 °C, and can handle a collector-emitter voltage of 350V. Ideal for amplifier applications due to its single configuration and flange mount package style.
HIGH RELIABILITY
BD179G
The Onsemi BD179G is a NPN BJT transistor with 3 terminals, capable of handling up to 30W power dissipation. With a max collector-emitter voltage of 80V and max current of 3A, it's ideal for amplifier applications. Operating at temperatures up to 150 °C, this silicon-based transistor has a transition frequency of 3MHz.
BD238G
BD238G by Onsemi is a PNP BJT transistor with 80V VCEO, 2A IC, and 25W Ptot. Ideal for amplifier applications, it has hFE of 25, operates b/w -55 to 150 °C, and features a flange mount package style.
2 A
25
-55 Cel
BD244BG
BD244BG by Onsemi is a PNP BJT transistor with 65W power dissipation, 80V collector-emitter voltage, and 6A collector current. Ideal for switching applications, it has a min hFE of 15 and operates up to 150°C. The through-hole package with flange mount style suits various electronic designs.
65 W
BD435G
The Onsemi BD435G is a NPN Power BJT with 36W power dissipation, ideal for switching applications. Featuring a max collector-emitter voltage of 32V and max collector current of 4A, it operates up to 150°C. With a min hFE of 50 and fT of 3MHz, this transistor is suitable for various electronic circuits.
32 V
50
36 W
BD438G
The Onsemi BD438G is a PNP BJT transistor with 3 terminals, capable of handling up to 4A collector current and 36W power dissipation. It operates b/w -55°C to 150°C, making it suitable for switching applications due to its high transition frequency of 3MHz.
45 V
BD440G
BD440G by Onsemi is a PNP BJT transistor with 60V VCEO, 4A IC, and 36W power dissipation. Ideal for switching applications, it has a hFE of 25 and operates up to 150 °C. The through-hole package with flange mount suits various electronic designs.
BD675G
BD675G by Onsemi is a power BJT transistor with NPN polarity. It has a max power dissipation of 40W and a min DC current gain of 750. This transistor is commonly used in amplifier applications.
750
BD675AG
BD675AG by Onsemi is a NPN power BJT with 40W max power dissipation, ideal for amplifier applications. Featuring a Darlington configuration with built-in diode and resistor, it offers a min hFE of 750. With a max operating temp of 150°C and VCE of 45V, this transistor has IC up to 4A.
BD676AG
BD676AG by Onsemi is a PNP BJT with 40W power dissipation, 750 min hFE, and 45V max collector-emitter voltage. Ideal for amplifier applications due to its Darlington configuration with built-in diode and resistor. Package style is flange mount with through-hole terminals.
BD677AG
BD677AG by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 60V and a max collector current of 4A. With a min DC current gain of 750, it is ideal for amplifier applications. This power transistor comes in a rectangular package style with through-hole terminals.
BD678G
BD678G by Onsemi is a PNP power BJT with Darlington configuration, ideal for amplifier applications. It features a max collector-emitter voltage of 60V, max collector current of 4A, and min DC current gain of 750 (hFE). With a package style of flange mount and terminal form through-hole, it offers high power dissipation up to 40W at a max operating temperature of 150°C.
BD678AG
BD678AG by Onsemi is a PNP power BJT with a max collector current of 4A and min DC current gain of 750. It features a built-in diode and resistor, making it ideal for amplifier applications. With a max operating temperature of 150°C, this transistor is suitable for high-power amplification needs.
BD680AG
The Onsemi BD680AG is a PNP power BJT with Darlington configuration, ideal for amplifier applications. It offers a max collector-emitter voltage of 80V, max collector current of 4A, and min DC current gain of 750. With a max power dissipation of 40W and operating temperature up to 150°C, it is suitable for various high-power electronic designs.
BD682TG
BD682TG by Onsemi is a PNP power BJT with 40W max power dissipation, hFE of 750, and VCE of 100V. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor in a rectangular package with through-hole terminals.
BD788G
BD788G by Onsemi is a PNP BJT transistor with 60V VCEO, 4A IC, and 15W power dissipation. Ideal for switching applications, it has a hFE of 5 and operates up to 150°C. The through-hole package style makes it suitable for various electronic designs.
15 W
50 MHz
BD809G
The Onsemi BD809G is a NPN BJT transistor with 80V VCE, 10A IC, and 90W Ptot. Ideal for amplifier applications due to its single configuration and high transition frequency of 1.5MHz. Packaged in plastic/epoxy with through-hole terminals for easy mounting.
90 W
1.5 MHz
BD810G
BD810G by Onsemi is a PNP BJT transistor with 80V VCE, 10A IC, and 90W power dissipation. Ideal for amplifier applications, it has a min hFE of 15 and operates up to 150 °C. The package style is flange mount with through-hole terminals in a rectangular shape.
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