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2N6497G

Onsemi

2N6497G by Onsemi

The Onsemi 2N6497G is a NPN power BJT with max. collector-emitter voltage of 250V, max. collector current of 5A, and max. power dissipation of 80W. Ideal for switching applications due to its single configuration and high transition frequency of 5MHz in a rectangular package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 3,761 parts In-Stock

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Digiode

USA . 830 parts In-Stock

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AZTECH Wire

Italy . 861 parts In-Stock

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$8.760

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Native Components

USA . 806 parts In-Stock

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$19.756

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Northwest PG Solutions

USA . 1,374 parts In-Stock

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SupplyDigital Components

Austria . 8,161 parts In-Stock

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Kulean Microsystems

USA . 3,713 parts In-Stock

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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TANS Electronics

Latvia . 2,131 parts In-Stock

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Corphita

USA . 1,941 parts In-Stock

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Problanco Electronics

Mexico . 522 parts In-Stock

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UHIMA Technologies

Türkiye . 166 parts In-Stock

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Corohmni

South Africa . 71 parts In-Stock

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Overview

Discover the power of the 2N6497G by Onsemi, a high-quality Power Bipolar Junction Transistor designed for switching applications. With Onsemi's reputation for excellence in manufacturing, this NPN transistor offers reliable performance and durability. Ideal for various electronic projects, this single-configured transistor boasts a maximum collector-emitter voltage of 250V and a maximum collector current of 5A, ensuring efficient power management. Experience seamless operation and optimal functionality with the 2N6497G, delivering exceptional value and benefits to customers seeking top-notch components for their projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good thermal insulation and protection for the transistor, ensuring reliable performance.

Polarity or Channel Type: NPN

Suitable for most general purpose applications, making it versatile in various circuit designs.

Configuration: SINGLE

Simplifies circuit design and assembly with only one transistor in the package.

Transistor Application: SWITCHING

Optimized for switching applications, offering fast response times and efficient performance.

Maximum Power Dissipation (Abs): 80 W

Can handle high power levels, making it suitable for demanding applications.

Maximum Operating Temperature: 150 °C

Can operate reliably in high temperature environments, ensuring stability and longevity.

Maximum Collector-Emitter Voltage: 250 V

Allows for high voltage operation, providing flexibility in circuit design.

Maximum Collector Current (IC): 5 A

Capable of handling high current levels, making it suitable for power applications.

Nominal Transition Frequency (fT): 5 MHz

Offers high frequency operation, ideal for applications requiring fast switching speeds.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N6497G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LEADFORM OPTIONS ARE AVAILABLE

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Minimum DC Current Gain (hFE):

3

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N6497G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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