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2N6438

Onsemi

2N6438 by Onsemi

The Onsemi 2N6438 is a PNP power BJT with max. collector-emitter voltage of 120V, max. collector current of 25A, and min. DC current gain of 12. It is used for switching applications due to its high power dissipation capability of 200W and single configuration in a round package style.

Median Price

$68.270

Lifecycle Status

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17

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1k+

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Verical

USA . 52 parts In-Stock

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$9.023

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Microchip Technology

USA . 855 parts In-Stock

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$76.640

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Rochester

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$68.270

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$61.080

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$57.490

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$61.080

$57.490

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Digiode

USA . 155 parts In-Stock

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$8.572

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Bristol Electronics

USA . 8 parts In-Stock

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$8.960

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American Microsemiconductor Inc.

USA . 8 parts In-Stock

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$10.980

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Vyrian

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Manotoh

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ES Components

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Speed Components Ltd

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ECAB

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PC Components Company LLC

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Prism Electronics

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North Shore Components

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DF Sales Co.

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EMSNET

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Native Components

USA . 454 parts In-Stock

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$0.489

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$0.470

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$0.470

Northwest PG Solutions

USA . 316 parts In-Stock

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$0.538

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$0.475

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$0.475

Corphita

USA . 2,237 parts In-Stock

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$8.121

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Component Stockers USA

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$8.630

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Corohmni

South Africa . 338 parts In-Stock

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Microchip USA

USA . 7,244 parts In-Stock

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$167.480

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TANS Electronics

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RGB Technical Solutions

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Problanco Electronics

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Glotronic Ltd.

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SupplyDigital Components

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Kulean Microsystems

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UHIMA Technologies

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Perfect Parts

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Montclair Electronics, Inc.

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Overview

Discover the 2N6438 by Onsemi, a high-quality Power BJT transistor designed for switching applications. Manufactured by Onsemi, known for their excellence in semiconductor technology, this PNP transistor offers exceptional performance and reliability. Ideal for a wide range of power applications, this transistor provides customers with superior efficiency and durability. Upgrade your electronic projects with the 2N6438 and experience the benefits of Onsemi's cutting-edge technology.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides better heat dissipation and mechanical strength, making the transistor durable and efficient in high power applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications, offering complementary functionality to NPN transistors for versatile circuit design.

Configuration: SINGLE

Single configuration simplifies circuit design and facilitates easier integration into systems requiring a single transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast response times and efficient performance in on/off operations.

Maximum Power Dissipation (Abs): 200 W

High power dissipation capability allows the transistor to handle large power loads without overheating, suitable for demanding applications.

Maximum Collector-Emitter Voltage: 120 V

Higher collector-emitter voltage rating provides a wider operating range and increased voltage handling capacity for diverse circuit requirements.

Maximum Collector Current (IC): 25 A

High collector current rating enables the transistor to handle large current flows, ensuring reliable performance in high current circuits.

Nominal Transition Frequency (fT): 40 MHz

Higher transition frequency allows for faster switching speeds and improved high-frequency performance in electronic circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N6438 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

120 V

Configuration:

Minimum DC Current Gain (hFE):

12

JEDEC-95 Code:

TO-204AA

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N6438 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

NSN

5961-01-172-9920, 5961011729920, 5961-01-143-3713, 5961011433713, 5961-01-143-3130, 5961011433130

NIIN

011729920, 011433713, 011433130

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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