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2N6491G

Onsemi

2N6491G by Onsemi

2N6491G by Onsemi is a PNP BJT transistor with max. power dissipation of 30W, max. collector current of 15A, and max. collector-emitter voltage of 80V. It is used for switching applications due to its single configuration and through-hole terminal form in a rectangular package style.

Median Price

$1.008

Lifecycle Status

Suppliers In-Stock

25

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 6,866 parts In-Stock

1+ parts

$0.550

100+ parts

$0.540

1k+ parts

$0.530

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6,866

$0.550

$0.540

$0.530

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Farnell

UK . 439 parts In-Stock

1+ parts

$0.677

100+ parts

$0.439

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$0.307

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439

$0.677

$0.439

$0.307

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Chip1Stop

Japan . 60 parts In-Stock

1+ parts

$1.167

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60

$1.167

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RS Americas

USA . 1 parts In-Stock

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$1.310

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1

$1.310

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Adafruit Industries

USA . 500 parts In-Stock

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$1.494

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$1.360

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$1.225

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500

$1.494

$1.360

$1.225

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Mouser Electronics

USA . 1,596 parts In-Stock

1+ parts

$1.560

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$0.585

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1,596

$1.560

$0.585

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DigiKey

USA . 1,010 parts In-Stock

1+ parts

$1.560

100+ parts

$0.656

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$0.470

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$0.371

1,010

$1.560

$0.656

$0.470

$0.371

Newark

USA . 60 parts In-Stock

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$1.720

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60

$1.720

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Verical

USA . 2,800 parts In-Stock

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$0.481

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$0.463

2,800

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$0.481

$0.463

Master Electronics

USA . 2,800 parts In-Stock

1+ parts

-

100+ parts

$0.443

1k+ parts

$0.401

10k+ parts

$0.365

2,800

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$0.443

$0.401

$0.365

Arrow

USA . 1,200 parts In-Stock

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$0.646

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$0.466

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$0.370

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$0.646

$0.466

$0.370

Avnet

USA . 950 parts In-Stock

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950

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RS (Exports)

UK . 910 parts In-Stock

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$0.849

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$0.812

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910

-

$0.849

$0.812

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Distributors (In-Stock)

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Digiode

USA . 1,041 parts In-Stock

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$0.513

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1,041

$0.513

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Vyrian

USA . 613 parts In-Stock

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$0.540

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613

$0.540

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TME

Poland . 606 parts In-Stock

1+ parts

$1.410

100+ parts

$0.542

1k+ parts

$0.519

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606

$1.410

$0.542

$0.519

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NAC Semi

USA . 6,600 parts In-Stock

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$0.971

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$0.874

6,600

-

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$0.971

$0.874

IBS Electronics

USA . 2,800 parts In-Stock

1+ parts

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100+ parts

$0.622

1k+ parts

$0.562

10k+ parts

$0.512

2,800

-

$0.622

$0.562

$0.512

ComSIT Distribution GmbH

Germany . 350 parts In-Stock

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350

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ComSIT USA

USA . 350 parts In-Stock

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350

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Schukat

Germany . 200 parts In-Stock

1+ parts

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100+ parts

$0.673

1k+ parts

$0.576

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200

-

$0.673

$0.576

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VNN

France . 100 parts In-Stock

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100

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Sea View Technologies

USA . 70 parts In-Stock

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70

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Bristol Electronics

USA . 70 parts In-Stock

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70

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Nova Conductors

Japan . 64 parts In-Stock

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64

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 686 parts In-Stock

1+ parts

$0.459

100+ parts

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686

$0.459

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Corphita

USA . 2,257 parts In-Stock

1+ parts

$0.486

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2,257

$0.486

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Component Stockers USA

USA . 2,856 parts In-Stock

1+ parts

$0.560

100+ parts

$0.510

1k+ parts

$0.400

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2,856

$0.560

$0.510

$0.400

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Corohmni

South Africa . 750 parts In-Stock

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$1.257

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750

$1.257

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Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$1.494

100+ parts

$1.360

1k+ parts

$1.225

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500

$1.494

$1.360

$1.225

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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56,986

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Lixinc

USA . 19,324 parts In-Stock

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TANS Electronics

Latvia . 7,914 parts In-Stock

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Perfect Parts

USA . 6,906 parts In-Stock

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Problanco Electronics

Mexico . 6,889 parts In-Stock

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SupplyDigital Components

Austria . 6,631 parts In-Stock

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6,631

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A-Z Elektronik GmbH

Germany . 5,514 parts In-Stock

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5,514

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Kepictronics

USA . 4,000 parts In-Stock

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Argo Parts USA

USA . 3,971 parts In-Stock

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3,971

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Kulean Microsystems

USA . 3,048 parts In-Stock

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Continental Prestige Electronics

USA . 2,471 parts In-Stock

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2,471

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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1,970

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Eastek

USA . 1,700 parts In-Stock

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1,700

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Allen Electronics Distributors

USA . 985 parts In-Stock

1+ parts

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$0.891

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985

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$0.891

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UHIMA Technologies

Türkiye . 786 parts In-Stock

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786

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iodParts Technologies Inc.

India . 350 parts In-Stock

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350

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Aranea Global

USA . 100 parts In-Stock

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100

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Overview

Unlock the power of innovation with the 2N6491G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors that are perfect for a wide range of switching applications. With a maximum power dissipation of 30W and a maximum collector current of 15A, this PNP transistor offers exceptional performance and reliability. Whether you're looking to upgrade your electronics or enhance your projects, the 2N6491G provides the value, benefits, and advantages you need to succeed. Experience the difference with Onsemi today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the transistor, making it reliable for various applications.

Polarity or Channel Type: PNP

The PNP polarity allows for easy integration into circuits with other PNP transistors, providing flexibility in circuit design.

Configuration: SINGLE

The single configuration simplifies circuit design and installation, making the transistor easy to use in various applications.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can handle rapid changes in current and voltage, making it suitable for high-speed switching circuits.

Maximum Power Dissipation (Abs): 30 W

With a high maximum power dissipation of 30W, this transistor can handle high power levels, making it suitable for applications requiring high power output.

Maximum Collector-Emitter Voltage: 80 V

The high maximum collector-emitter voltage of 80V allows for operation in circuits with higher voltages, increasing the versatility of the transistor.

Maximum Collector Current (IC): 15 A

Capable of handling a maximum collector current of 15A, this transistor is ideal for applications requiring high current operation.

Nominal Transition Frequency (fT): 5 MHz

With a nominal transition frequency of 5MHz, this transistor can support high-frequency applications, making it suitable for use in fast-switching circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N6491G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LEADFORM OPTIONS ARE AVAILABLE

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N6491G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

NSN

5961-01-068-7814, 5961010687814

NIIN

010687814

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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