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2N6487

Onsemi

2N6487 by Onsemi

Onsemi's 2N6487 is a NPN BJT transistor with max. power dissipation of 30W, max. collector-emitter voltage of 60V, and max. collector current of 15A. Ideal for switching applications due to its single configuration and silicon element material, it operates at up to 150 °C making it suitable for various high-power tasks.

Median Price

$1.281

Lifecycle Status

Suppliers In-Stock

25

In-Stock Inventory

1k+

Distributors (Authorized)

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Adafruit Industries

USA . 30 parts In-Stock

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$1.710

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$1.556

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$1.402

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$1.710

$1.556

$1.402

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Rochester

USA . 1,894 parts In-Stock

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$1.120

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$0.930

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$0.829

1,894

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$0.930

$0.829

DigiKey

USA . 1,894 parts In-Stock

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$1.400

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Verical

USA . 1,399 parts In-Stock

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Distributors (In-Stock)

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Digiode

USA . 5,894 parts In-Stock

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$0.875

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Vyrian

USA . 2,745 parts In-Stock

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American Microsemiconductor Inc.

USA . 1,204 parts In-Stock

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$2.790

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ComSIT Distribution GmbH

Germany . 23,800 parts In-Stock

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ComSIT USA

USA . 23,800 parts In-Stock

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Electronic Expediters

USA . 8,194 parts In-Stock

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R&J Components

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Anansix

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DF Sales Co.

USA . 922 parts In-Stock

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DF Sales Co.

USA . 922 parts In-Stock

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Bristol Electronics

USA . 290 parts In-Stock

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$0.685

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$0.585

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290

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$0.685

$0.585

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ECAB

Sweden . 280 parts In-Stock

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Lakeland Logistics Inc

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Elcom Components

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Resion

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ACDS - Activité Composants Distribution Service

France . 154 parts In-Stock

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MISTER SPROCKETS

USA . 88 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 27 parts In-Stock

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LittleDiode

UK . 12 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 4 parts In-Stock

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Tech-Mark Corp

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Distributors (Availability)

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Corphita

USA . 5,653 parts In-Stock

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$0.829

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$0.829

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Corohmni

South Africa . 167 parts In-Stock

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$1.002

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IDEA Electronic Components Group

UK . 1,035 parts In-Stock

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$1.443

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$1.299

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1,035

$1.443

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Advanced Electronics

New Zealand . 30 parts In-Stock

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$1.710

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$1.556

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$1.402

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30

$1.710

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$1.402

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Northwest PG Solutions

USA . 3,599 parts In-Stock

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$2.552

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MKK Technologies

India . 702 parts In-Stock

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$2.714

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702

$2.714

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DigiPath Technology Company

USA . 702 parts In-Stock

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$2.714

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$2.714

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Microchip USA

USA . 461 parts In-Stock

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$5.720

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 13,026 parts In-Stock

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TANS Electronics

Latvia . 6,777 parts In-Stock

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Kepictronics

USA . 5,000 parts In-Stock

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Problanco Electronics

Mexico . 4,697 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,500 parts In-Stock

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SupplyDigital Components

Austria . 4,060 parts In-Stock

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Kulean Microsystems

USA . 2,570 parts In-Stock

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Supply Digital

USA . 2,555 parts In-Stock

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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Parana Technologies

USA . 1,273 parts In-Stock

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$1.726

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Native Components

USA . 1,102 parts In-Stock

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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Continental Prestige Electronics

USA . 818 parts In-Stock

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$0.832

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UHIMA Technologies

Türkiye . 273 parts In-Stock

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Assy Fe

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RTC Component Inc.

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Overview

Enhance your power management systems with the 2N6487 from Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-quality products for all your needs. The 2N6487 is a versatile power BJT ideal for switching applications, offering a maximum collector current of 15 A and a peak reflow temperature of 235 °C. With its high reliability and superior performance, this NPN transistor provides value and benefits that will elevate your projects to new heights. Upgrade your power systems with the 2N6487 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and durability, making the transistor more reliable.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications and are easy to interface with other components.

Configuration: SINGLE

Simplified design with single transistor for switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance.

Maximum Power Dissipation (Abs): 30 W

With a high power dissipation rating, this transistor can handle heavy loads without overheating.

Maximum Collector-Emitter Voltage: 60 V

Suitable for applications that require high voltage handling capabilities.

Maximum Collector Current (IC): 15 A

Capable of handling high current loads, making it versatile for various applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N6487 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N6487 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

NSN

5961-01-251-7037, 5961012517037, 5961-01-270-5279, 5961012705279, 5961-01-264-5144, 5961012645144

NIIN

012517037, 012705279, 012645144

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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