Loading...

2N6487AS

Onsemi

2N6487AS by Onsemi

The Onsemi 2N6487AS is a NPN power BJT with max. VCE of 60V and max. IC of 15A, ideal for switching applications. It has a min. hFE of 5 and operates up to 150 °C, featuring a flange mount package style for through-hole terminals. With silicon element material, it offers a transition frequency of 5MHz for efficient performance in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,425 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,425

-

-

-

-

Vyrian

USA . 663 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

663

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 640 parts In-Stock

1+ parts

$24.830

100+ parts

-

1k+ parts

-

10k+ parts

-

640

$24.830

-

-

-

Northwest PG Solutions

USA . 162 parts In-Stock

1+ parts

$27.313

100+ parts

$24.582

1k+ parts

-

10k+ parts

-

162

$27.313

$24.582

-

-

Kulean Microsystems

USA . 7,419 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,419

-

-

-

-

SupplyDigital Components

Austria . 5,452 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,452

-

-

-

-

TANS Electronics

Latvia . 3,281 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,281

-

-

-

-

Corphita

USA . 2,031 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,031

-

-

-

-

Problanco Electronics

Mexico . 633 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

633

-

-

-

-

UHIMA Technologies

Türkiye . 515 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

515

-

-

-

-

Corohmni

South Africa . 293 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

293

-

-

-

-

Overview

Elevate your power management with the Onsemi 2N6487AS Power Bipolar Junction Transistor. Manufactured by industry leader Onsemi, this NPN transistor offers high-quality performance for switching applications. With a maximum collector-emitter voltage of 60V and a maximum collector current of 15A, this transistor delivers reliable power regulation. Its durable plastic/epoxy package ensures long-lasting durability. Upgrade your electronic projects with the dependable performance of the 2N6487AS from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and reliable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering good performance and versatility.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to use in various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, offering fast response times and efficient operation.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and placement on circuit boards, optimizing space usage.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and easy soldering, ensuring reliable performance in different environments.

No. of Terminals: 3

Simplified design with fewer terminals, making it easier to incorporate into circuits and reducing complexity.

Package Style (Meter): FLANGE MOUNT

Flange mount design allows for secure attachment to heat sinks or mounting surfaces, improving thermal management.

Minimum DC Current Gain (hFE): 5

Ensures consistent and stable amplification of current in the circuit, offering predictable performance.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for a wide range of applications in different operating environments.

Maximum Collector-Emitter Voltage: 60 V

Capable of handling high voltage levels, ensuring reliable operation in circuits with varying voltage requirements.

Transistor Element Material: SILICON

Silicon offers good performance and reliability, making it a popular choice for transistors in various applications.

Maximum Collector Current (IC): 15 A

High collector current rating allows for power handling capabilities, making it suitable for switching high loads.

Terminal Finish: TIN LEAD

Tin lead finish provides good conductivity and solderability, ensuring secure connections in the circuit.

Terminal Position: SINGLE

Single terminal position simplifies circuit design and integration, reducing complexity in assembly and maintenance.

Case Connection: COLLECTOR

Collector case connection allows for efficient heat dissipation, improving overall performance and reliability.

Nominal Transition Frequency (fT): 5 MHz

High transition frequency enables fast switching speeds, making it suitable for applications that require quick response times.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N6487AS attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

5

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N6487AS Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20