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2N6488G

Onsemi

2N6488G by Onsemi

Onsemi's 2N6488G is a NPN BJT with max. power dissipation of 30W, max. collector current of 15A, and max. collector-emitter voltage of 80V. Ideal for switching applications due to its single configuration and high transition frequency of 5MHz in a flange mount package style.

Median Price

$0.553

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

Distributors (Authorized)

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Newark

USA . 141 parts In-Stock

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Farnell

UK . 257 parts In-Stock

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$1.037

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$0.589

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$0.411

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257

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Mouser Electronics

USA . 1,120 parts In-Stock

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$1.540

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$0.543

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$0.424

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DigiKey

USA . 339 parts In-Stock

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$1.550

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$0.655

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$0.469

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$0.370

339

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Rochester

USA . 22,399 parts In-Stock

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$0.503

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Verical

USA . 12,291 parts In-Stock

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Master Electronics

USA . 3,800 parts In-Stock

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$0.584

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$0.419

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$0.411

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$0.411

Chip1Stop

Japan . 1,919 parts In-Stock

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$0.497

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$0.360

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Arrow

USA . 900 parts In-Stock

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Avnet

USA . 650 parts In-Stock

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RS (Exports)

UK . 235 parts In-Stock

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$0.627

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Distributors (In-Stock)

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Digiode

USA . 78 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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$0.455

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NAC Semi

USA . 200 parts In-Stock

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TME

Poland . 737 parts In-Stock

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$1.460

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$0.562

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737

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IBS Electronics

USA . 3,800 parts In-Stock

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$0.870

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$0.554

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Vyrian

USA . 3,606 parts In-Stock

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Electro Mavin

USA . 1,800 parts In-Stock

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VNN

France . 1,522 parts In-Stock

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Flip Electronics

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Extreme Components

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LittleDiode

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Semicontronic

India . 3,908 parts In-Stock

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$0.349

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$0.340

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$0.339

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Ampacity Inc.

Singapore . 3,791 parts In-Stock

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Corphita

USA . 593 parts In-Stock

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Corohmni

South Africa . 230 parts In-Stock

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Component Stockers USA

USA . 16,944 parts In-Stock

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$0.400

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$0.360

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Argo Parts USA

USA . 1,477 parts In-Stock

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$0.441

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Netroflash

USA . 1,000 parts In-Stock

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$0.432

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Continental Prestige Electronics

USA . 19,370 parts In-Stock

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$0.456

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$0.318

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Aztec Data Supply Inc.

USA . 1,762 parts In-Stock

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$1.873

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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Perfect Parts

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Lixinc

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TANS Electronics

Latvia . 7,286 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,353 parts In-Stock

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GreenTree Electronics

Israel . 5,290 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,439 parts In-Stock

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SupplyDigital Components

Austria . 4,021 parts In-Stock

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Kepictronics

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Kulean Microsystems

USA . 3,334 parts In-Stock

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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Eastek

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UHIMA Technologies

Türkiye . 523 parts In-Stock

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iodParts Technologies Inc.

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Problanco Electronics

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Overview

Elevate your electronic projects with the 2N6488G Power Bipolar Junction Transistor from Onsemi. Known for their superior quality and reliability, Onsemi products are trusted by professionals worldwide. Ideal for switching applications, this NPN transistor offers a maximum collector current of 15A and a transition frequency of 5MHz. With a maximum power dissipation of 30W and a collector-emitter voltage of 80V, the 2N6488G provides exceptional performance and durability. Unleash the full potential of your designs with the precision and efficiency of Onsemi's Power BJT transistors.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan and reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering versatility in applications.

Configuration: SINGLE

Simplifies circuit design and reduces complexity in setups using a single transistor.

Transistor Application: SWITCHING

Specifically designed for switching applications, offering fast response times and efficient performance.

Maximum Power Dissipation (Abs): 30 W

Can handle high power levels, making it suitable for applications requiring high power dissipation.

Maximum Operating Temperature: 150 °C

Operates reliably at high temperatures, making it suitable for industrial and automotive environments.

Maximum Collector-Emitter Voltage: 80 V

Provides a high voltage capability, making it suitable for applications with higher voltage requirements.

Maximum Collector Current (IC): 15 A

Allows for high current flow, making it suitable for applications requiring high current handling capacity.

Nominal Transition Frequency (fT): 5 MHz

Offers a high transition frequency, enabling fast switching speeds in high-frequency circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N6488G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LEADFORM OPTIONS ARE AVAILABLE

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N6488G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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