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2N6487BA

Onsemi

2N6487BA by Onsemi

Onsemi's 2N6487BA is a NPN BJT transistor with max. collector-emitter voltage of 60V and max. collector current of 15A. With a min. DC current gain of 5, it's ideal for switching applications at up to 150 °C operating temperature. Package style is flange mount with through-hole terminals in a rectangular shape for single configuration use.

Median Price

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Lifecycle Status

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1k+

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Vyrian

USA . 2,283 parts In-Stock

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Digiode

USA . 1,026 parts In-Stock

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Native Components

USA . 807 parts In-Stock

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$57.882

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$55.567

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Northwest PG Solutions

USA . 929 parts In-Stock

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$63.671

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SupplyDigital Components

Austria . 8,073 parts In-Stock

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TANS Electronics

Latvia . 6,617 parts In-Stock

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Problanco Electronics

Mexico . 3,915 parts In-Stock

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Corphita

USA . 1,534 parts In-Stock

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Kulean Microsystems

USA . 218 parts In-Stock

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UHIMA Technologies

Türkiye . 175 parts In-Stock

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Corohmni

South Africa . 152 parts In-Stock

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Overview

Enhance your power management capabilities with the Onsemi 2N6487BA Power Bipolar Junction Transistor. Manufactured by a reputable brand, this NPN transistor is perfect for switching applications, offering reliable performance and durability. With a maximum collector-emitter voltage of 60V and a collector current of 15A, this transistor delivers exceptional value and efficiency. Upgrade your electronic projects with the Onsemi 2N6487BA and experience improved performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

Commonly used in switching applications, making it versatile for a variety of circuit designs.

Configuration: SINGLE

Simplifies circuit design and makes it easier to implement in projects.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in those scenarios.

Package Shape: RECTANGULAR

Allows for easy mounting and integration into circuits.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering onto circuit boards.

No. of Terminals: 3

Simplifies connection and reduces complexity in circuit design.

Package Style (Meter): FLANGE MOUNT

Allows for secure mounting in various applications.

Minimum DC Current Gain (hFE): 5

Ensures a minimum level of amplification in the circuit.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for a wide range of operating environments.

Maximum Collector-Emitter Voltage: 60 V

Can handle relatively high voltages, expanding the range of applications it can be used in.

Transistor Element Material: SILICON

Offers high performance and reliability in various circuit applications.

Maximum Collector Current (IC): 15 A

Capable of handling high currents, suitable for power applications.

Terminal Finish: TIN LEAD

Provides a reliable and easy-to-solder finish for the terminals.

Terminal Position: SINGLE

Simplifies connection and reduces chances of errors in wiring.

Case Connection: COLLECTOR

Clear designation of terminal connections for ease of circuit design.

Nominal Transition Frequency (fT): 5 MHz

Indicates the speed at which the transistor can switch, suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N6487BA attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

5

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N6487BA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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