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2N6436

Onsemi

2N6436 by Onsemi

The Onsemi 2N6436 is a PNP power BJT with max. Vce of 80V and max. Ic of 25A. With hFE of min. 12, it's ideal for switching applications at a frequency of 40MHz. Its round flange mount package makes it suitable for high-power electronic circuits.

Median Price

$62.460

Lifecycle Status

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13

In-Stock Inventory

1k+

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Microchip Technology

USA . 401 parts In-Stock

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$62.460

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TEDSS.com

USA . 17 parts In-Stock

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$25.000

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NAC Semi

USA . 11 parts In-Stock

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$26.750

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Digiode

USA . 1,000 parts In-Stock

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$59.337

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American Microsemiconductor Inc.

USA . 4 parts In-Stock

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$60.230

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Vyrian

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Digital Electronic Gebert Verwaltungs UG

Germany . 60 parts In-Stock

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J & M Industries LLC

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ACDS - Activité Composants Distribution Service

France . 29 parts In-Stock

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North Shore Components

USA . 28 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 13 parts In-Stock

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R&J Components

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ECAB

Sweden . 1 parts In-Stock

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Native Components

USA . 833 parts In-Stock

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$1.110

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Northwest PG Solutions

USA . 1,909 parts In-Stock

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$1.221

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Andel Nordic

Denmark . 1,320 parts In-Stock

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$2.318

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$2.226

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$2.226

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Corohmni

South Africa . 462 parts In-Stock

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$25.000

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Corphita

USA . 1,609 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 26,180 parts In-Stock

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Microchip USA

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Problanco Electronics

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Marpe Global Electronics

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QualityLine Systems

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XL Components Corporation

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TANS Electronics

Latvia . 2,805 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

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UHIMA Technologies

Türkiye . 440 parts In-Stock

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Overview

Discover the power of the 2N6436 by Onsemi, a high-quality Power Bipolar Junction Transistor designed for switching applications. With Onsemi's reputation for excellence in semiconductor manufacturing, you can trust in the reliability and performance of this PNP transistor. Ideal for a range of applications, from industrial automation to power supplies, the 2N6436 offers customers value through its high collector current, low DC current gain, and superior transition frequency. Upgrade your circuits with the 2N6436 and experience the benefits of efficiency and precision in your electronic designs.

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides durability and efficient heat dissipation, making the transistor suitable for high-power applications.

Polarity or Channel Type: PNP

PNP transistors allow for sourcing current, making them ideal for switching applications and complementary pairs with NPN transistors.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making the transistor easy to use in various electronic projects.

Transistor Application: SWITCHING

Designed for switching applications, the transistor offers fast switching speeds and high efficiency in controlling electronic circuits.

Package Shape: ROUND

Round package shape allows for easy mounting and installation in compact spaces, making it versatile for different design requirements.

Terminal Form: PIN/PEG

Pin/peg terminals provide a secure connection and make the transistor suitable for manual or automated assembly processes.

No. of Terminals: 2

Having only 2 terminals simplifies the circuit connection and reduces the chances of wiring errors, enhancing overall reliability.

Package Style (Meter): FLANGE MOUNT

Flange mount package style allows for easy mounting on a circuit board or heatsink, ensuring stable and secure placement for effective heat dissipation.

Minimum DC Current Gain (hFE): 12

With a minimum DC current gain of 12, the transistor provides consistent amplification of input signals, ensuring reliable performance in various applications.

Maximum Collector-Emitter Voltage: 80 V

With a high maximum collector-emitter voltage of 80V, the transistor can withstand higher voltage levels, making it suitable for power applications.

Transistor Element Material: SILICON

Silicon material offers excellent thermal stability and high conductivity, improving overall performance and reliability of the transistor.

Maximum Collector Current (IC): 25 A

High maximum collector current of 25A allows the transistor to handle large power loads, making it suitable for high-current circuits and applications.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy soldering and connection to the circuit board, ensuring a secure and reliable electrical connection.

Case Connection: COLLECTOR

Collector case connection simplifies the circuit layout and improves heat dissipation, enhancing the overall performance and reliability of the transistor.

Nominal Transition Frequency (fT): 40 MHz

With a nominal transition frequency of 40MHz, the transistor offers fast response times and high-frequency operation, making it suitable for high-speed switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N6436 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

12

JEDEC-95 Code:

TO-204AA

JESD-30 Code:

O-MBFM-P2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N6436 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-215-1554, 5961012151554, 5961-01-087-8180, 5961010878180, 5961-01-159-6669, 5961011596669, 5961-01-121-4374, 5961011214374

NIIN

012151554, 010878180, 011596669, 011214374

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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