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2N6437

Onsemi

2N6437 by Onsemi

2N6437 by Onsemi is a PNP BJT transistor with 100V VCE, 25A IC, and 200W power dissipation. Ideal for switching applications due to its high hFE of 12 and fT of 40MHz. Packaged in metal flange mount style for efficient heat dissipation.

Median Price

$76.640

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

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Microchip Technology

USA . 34 parts In-Stock

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$76.640

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Digiode

USA . 517 parts In-Stock

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$72.808

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Vyrian

USA . 6,511 parts In-Stock

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Tech-Mark Corp

USA . 40 parts In-Stock

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Flip Electronics

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Connector Distribution Corp

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Right Parts Inc.

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Sunrise Surplus Inc.

USA . 7 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 3 parts In-Stock

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Electronic Expediters

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Native Components

USA . 233 parts In-Stock

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$0.099

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$0.095

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Northwest PG Solutions

USA . 822 parts In-Stock

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$0.109

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$0.096

822

$0.109

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$0.096

Advanced Electronics

New Zealand . 2,500 parts In-Stock

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$2.264

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$2.060

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$1.856

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$2.264

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Corphita

USA . 2,262 parts In-Stock

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Corohmni

South Africa . 248 parts In-Stock

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Microchip USA

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A-Z Elektronik GmbH

Germany . 6,573 parts In-Stock

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SupplyDigital Components

Austria . 4,443 parts In-Stock

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Problanco Electronics

Mexico . 4,432 parts In-Stock

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Kulean Microsystems

USA . 3,195 parts In-Stock

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West Coast Incorporated

USA . 2,794 parts In-Stock

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TANS Electronics

Latvia . 2,649 parts In-Stock

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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UHIMA Technologies

Türkiye . 336 parts In-Stock

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A-Plus Industry Inc.

USA . 3 parts In-Stock

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Overview

Unleash the power of efficiency and reliability with the Onsemi 2N6437 Power Bipolar Junction Transistor. Manufactured by the trusted brand Onsemi, this PNP transistor is designed for switching applications, delivering a seamless performance that surpasses expectations. With a maximum power dissipation of 200W and a maximum collector current of 25A, this transistor ensures optimal functionality in various electronic devices. Elevate your projects with the top-quality 2N6437 from Onsemi, offering unmatched value and benefits to customers seeking high-performance components for their applications.

Feature Benefit Bullets

Package Body Material: METAL

Provides durability and heat dissipation, making the transistor suitable for high-power applications.

Polarity or Channel Type: PNP

Allows for current to flow from emitter to collector, enabling the transistor to switch between on and off states efficiently.

Configuration: SINGLE

Simplifies circuit design and reduces complexity in applications where only one transistor is needed.

Transistor Application: SWITCHING

Designed specifically for switching operations, ensuring fast switching speeds and efficient power control.

Maximum Power Dissipation (Abs): 200 W

Capable of handling high power levels without overheating or breaking down, making it suitable for demanding applications.

Maximum Collector Current (IC): 25 A

Can handle high collector currents, providing ample capability for controlling heavy loads in industrial applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N6437 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

12

JEDEC-95 Code:

TO-204AA

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N6437 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-317-9371, 5961013179371, 5961-01-087-8180, 5961010878180, 5961-01-159-6669, 5961011596669

NIIN

013179371, 010878180, 011596669

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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