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2N6487G

Onsemi

2N6487G by Onsemi

The Onsemi 2N6487G is a NPN power BJT with max. collector-emitter voltage of 60V and max. collector current of 15A. It has a min. DC current gain of 5, suitable for switching applications with a max. power dissipation of 30W at an operating temp. of 150°C.

Median Price

$0.522

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 50 parts In-Stock

1+ parts

$0.503

100+ parts

$0.458

1k+ parts

$0.412

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-

50

$0.503

$0.458

$0.412

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Element14

Singapore . 7 parts In-Stock

1+ parts

$1.068

100+ parts

$0.680

1k+ parts

$0.470

10k+ parts

$0.401

7

$1.068

$0.680

$0.470

$0.401

Mouser Electronics

USA . 555 parts In-Stock

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$1.550

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555

$1.550

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DigiKey

USA . 94 parts In-Stock

1+ parts

$1.550

100+ parts

$0.655

1k+ parts

$0.469

10k+ parts

$0.370

94

$1.550

$0.655

$0.469

$0.370

Rochester

USA . 19,121 parts In-Stock

1+ parts

-

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$0.503

1k+ parts

$0.417

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$0.372

19,121

-

$0.503

$0.417

$0.372

Verical

USA . 10,450 parts In-Stock

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$0.522

10k+ parts

$0.465

10,450

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$0.522

$0.465

Master Electronics

USA . 1,950 parts In-Stock

1+ parts

-

100+ parts

$0.355

1k+ parts

$0.335

10k+ parts

$0.320

1,950

-

$0.355

$0.335

$0.320

EBV Elektronik

Germany . 1,600 parts In-Stock

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1,600

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Flip Electronics (Authorized)

USA . 100 parts In-Stock

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100

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Distributors (In-Stock)

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Digiode

USA . 725 parts In-Stock

1+ parts

$0.390

100+ parts

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725

$0.390

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Vyrian

USA . 5,276 parts In-Stock

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5,276

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IBS Electronics

USA . 1,950 parts In-Stock

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-

100+ parts

$0.497

1k+ parts

$0.470

10k+ parts

$0.449

1,950

-

$0.497

$0.470

$0.449

NAC Semi

USA . 1,300 parts In-Stock

1+ parts

-

100+ parts

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$2.080

10k+ parts

$1.890

1,300

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$2.080

$1.890

Zilex Electronics Inc.

Canada . 895 parts In-Stock

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895

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Semi Source

USA . 380 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 203 parts In-Stock

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ComSIT Distribution GmbH

Germany . 150 parts In-Stock

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ComSIT USA

USA . 150 parts In-Stock

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150

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Flip Electronics

USA . 100 parts In-Stock

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100

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Distributors (Availability)

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Native Components

USA . 544 parts In-Stock

1+ parts

$0.058

100+ parts

-

1k+ parts

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10k+ parts

$0.056

544

$0.058

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-

$0.056

Corphita

USA . 1,966 parts In-Stock

1+ parts

$0.370

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1,966

$0.370

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Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$0.503

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$0.458

1k+ parts

$0.412

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50

$0.503

$0.458

$0.412

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Continental Prestige Electronics

USA . 159 parts In-Stock

1+ parts

$0.538

100+ parts

$0.440

1k+ parts

$0.268

10k+ parts

$0.246

159

$0.538

$0.440

$0.268

$0.246

Corohmni

South Africa . 82 parts In-Stock

1+ parts

$0.590

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82

$0.590

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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Microchip USA

USA . 10,136 parts In-Stock

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Problanco Electronics

Mexico . 5,403 parts In-Stock

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Perfect Parts

USA . 3,884 parts In-Stock

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Kulean Microsystems

USA . 3,509 parts In-Stock

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TANS Electronics

Latvia . 2,368 parts In-Stock

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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Kepictronics

USA . 1,250 parts In-Stock

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SupplyDigital Components

Austria . 1,142 parts In-Stock

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Authorized Procurement Solutions

USA . 1,107 parts In-Stock

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Northwest PG Solutions

USA . 91 parts In-Stock

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UHIMA Technologies

Türkiye . 60 parts In-Stock

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Overview

Enhance the performance of your electronic devices with the 2N6487G by Onsemi, a top-quality Power BJT transistor designed for switching applications. With a maximum power dissipation of 30W and a maximum collector current of 15A, this NPN transistor offers unparalleled reliability and efficiency. Manufactured by Onsemi, a trusted leader in semiconductor technology, the 2N6487G guarantees superior performance and durability. Upgrade your electronics today with the 2N6487G and experience the benefits of high-quality components that deliver exceptional value and precision.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications, making this transistor versatile for a variety of projects.

Configuration: SINGLE

Simplifies circuit design by only requiring a single transistor to achieve the desired function.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in these scenarios.

Maximum Power Dissipation (Abs) 30 W

Can handle high power levels, making it suitable for applications where power dissipation is a concern.

Maximum Collector-Emitter Voltage: 60 V

With a high maximum voltage rating, this transistor can be used in circuits with higher voltage requirements.

Maximum Collector Current (IC): 15 A

Capable of handling high currents, making it suitable for applications that require a significant amount of current.

Nominal Transition Frequency (fT): 5 MHz

Has a high transition frequency, making it ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N6487G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N6487G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

NSN

5961-01-251-7037, 5961012517037

NIIN

012517037

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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