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2N6487BG

Onsemi

2N6487BG by Onsemi

The Onsemi 2N6487BG is a NPN power BJT with max. Vce of 60V and Ic of 15A. It has a min. hFE of 5 and fT of 5MHz, ideal for switching applications in various industries due to its high collector current capacity and temperature tolerance up to 150 °C.

Median Price

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Lifecycle Status

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1k+

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Digiode

USA . 1,854 parts In-Stock

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SupplyDigital Components

Austria . 8,026 parts In-Stock

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Kulean Microsystems

USA . 7,622 parts In-Stock

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TANS Electronics

Latvia . 3,532 parts In-Stock

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Problanco Electronics

Mexico . 1,669 parts In-Stock

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Northwest PG Solutions

USA . 1,334 parts In-Stock

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UHIMA Technologies

Türkiye . 883 parts In-Stock

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Native Components

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Corohmni

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Overview

Power up your projects with the 2N6487BG by Onsemi, a top-quality Power Bipolar Junction Transistor perfect for switching applications. Manufactured by Onsemi, known for their reliable and high-performance components, this NPN transistor offers a maximum collector-emitter voltage of 60V and a maximum collector current of 15A. With a minimum DC current gain of 5 and a nominal transition frequency of 5MHz, this transistor delivers exceptional performance and value. Trust Onsemi to provide you with the best components for your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the transistor lightweight and durable, suitable for various applications.

Polarity or Channel Type: NPN

The NPN configuration allows for easy integration into most circuit designs and offers reliable performance in switching applications.

Configuration: SINGLE

The single configuration simplifies circuit design and installation, making it user-friendly for those working with the transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor excels in rapidly turning circuits on and off, making it ideal for various electronic devices and systems.

Package Shape: RECTANGULAR

The rectangular package shape provides easy mounting on circuit boards and allows for efficient use of space in electronic designs.

Terminal Form: THROUGH-HOLE

The through-hole terminal form ensures secure connections and reliable performance in various operating conditions.

No. of Terminals: 3

With three terminals, this transistor offers simplicity in circuit connections and enables easy integration into existing electronic systems.

Package Style (Meter): FLANGE MOUNT

The flange mount package style allows for stable and secure mounting on different surfaces, enhancing the overall durability and performance of the transistor.

Minimum DC Current Gain (hFE): 5

A minimum DC current gain of 5 ensures reliable amplification of current signals, making this transistor suitable for a wide range of applications requiring signal amplification.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperatures, making it suitable for applications in demanding environments.

Maximum Collector-Emitter Voltage: 60 V

The high maximum collector-emitter voltage of 60 V allows for safe and efficient operation in various circuit configurations, ensuring reliable performance in different applications.

Transistor Element Material: SILICON

The use of silicon as the transistor element material provides high performance, stability, and durability, making this transistor a reliable choice for various electronic applications.

Maximum Collector Current (IC): 15 A

With a maximum collector current of 15 A, this transistor can handle high current loads, making it suitable for applications requiring high power output.

Terminal Position: SINGLE

The single terminal position simplifies circuit connections and installation, making it easier for users to incorporate this transistor into their designs.

Case Connection: COLLECTOR

The collector case connection provides a stable connection point for the transistor, ensuring efficient heat dissipation and overall performance in various operating conditions.

Nominal Transition Frequency (fT): 5 MHz

With a nominal transition frequency of 5 MHz, this transistor offers fast response times and high-frequency performance, making it ideal for applications that require rapid switching and signal processing.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N6487BG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

5

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N6487BG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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