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2N6487DW

Onsemi

2N6487DW by Onsemi

The Onsemi 2N6487DW is a NPN BJT transistor with max. Vce of 60V, Ic of 15A, and hFE of 5. Ideal for switching applications due to its single configuration and high operating temp. of 150 °C. Package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,470 parts In-Stock

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2,470

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Digiode

USA . 1,369 parts In-Stock

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1,369

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Distributors (Availability)

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Native Components

USA . 200 parts In-Stock

1+ parts

$279.196

100+ parts

$273.612

1k+ parts

$270.820

10k+ parts

$268.028

200

$279.196

$273.612

$270.820

$268.028

Northwest PG Solutions

USA . 1,860 parts In-Stock

1+ parts

$307.116

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1,860

$307.116

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Problanco Electronics

Mexico . 7,882 parts In-Stock

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7,882

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SupplyDigital Components

Austria . 6,842 parts In-Stock

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6,842

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TANS Electronics

Latvia . 4,594 parts In-Stock

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4,594

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Corphita

USA . 2,178 parts In-Stock

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2,178

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Kulean Microsystems

USA . 396 parts In-Stock

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396

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Corohmni

South Africa . 361 parts In-Stock

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361

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UHIMA Technologies

Türkiye . 262 parts In-Stock

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Overview

Enhance your electronic projects with the 2N6487DW Power Bipolar Junction Transistor by Onsemi! Manufactured with precision and reliability in mind, this NPN transistor is perfect for switching applications. With a high collector current of 15A and a maximum operating temperature of 150 °C, this transistor offers superior performance and durability. Whether you're a hobbyist or a professional, the 2N6487DW provides excellent value and efficiency for all your circuit design needs. Experience the quality and advantages that Onsemi products bring to the table with this versatile component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-term reliability.

Polarity or Channel Type: NPN

Commonly used for general purpose applications, making it versatile in various circuit designs.

Configuration: SINGLE

Simplifies circuit design and installation, reducing complexity.

Transistor Application: SWITCHING

Designed specifically for switching applications, offering efficient performance in controlling power flow.

Package Shape: RECTANGULAR

Facilitates easy mounting and integration into circuit boards.

Terminal Form: THROUGH-HOLE

Enables secure and stable connections on circuit boards.

No. of Terminals: 3

Simplifies circuit connections while providing necessary functionality.

Package Style (Meter): FLANGE MOUNT

Offers stability and mechanical support during installation.

Minimum DC Current Gain (hFE): 5

Ensures consistent and reliable amplification of current in the circuit.

Maximum Operating Temperature: 150 °C

Can operate effectively in a wide range of temperature environments, making it versatile.

Maximum Collector-Emitter Voltage: 60 V

Suitable for applications requiring higher voltage handling capabilities.

Transistor Element Material: SILICON

Offers high performance and reliability as a semiconductor material.

Maximum Collector Current (IC): 15 A

Capable of handling high current loads in the circuit.

Terminal Finish: TIN LEAD

Provides good electrical conductivity and solderability for secure terminal connections.

Terminal Position: SINGLE

Simplifies installation and enables easy circuit connections.

Case Connection: COLLECTOR

Helps in efficient and reliable current flow through the transistor.

Nominal Transition Frequency (fT): 5 MHz

Indicates the frequency at which the transistor can switch efficiently, suitable for various applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N6487DW attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

5

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N6487DW Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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