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2N6487AU

Onsemi

2N6487AU by Onsemi

The Onsemi 2N6487AU is a NPN BJT transistor with max. collector-emitter voltage of 60V and max. collector current of 15A. With a min. DC current gain of 5, it's ideal for switching applications at up to 150 °C operating temperature. Its package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

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Native Components

USA . 555 parts In-Stock

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Northwest PG Solutions

USA . 1,153 parts In-Stock

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Kulean Microsystems

USA . 7,516 parts In-Stock

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SupplyDigital Components

Austria . 6,438 parts In-Stock

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TANS Electronics

Latvia . 3,176 parts In-Stock

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Corphita

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Problanco Electronics

Mexico . 1,896 parts In-Stock

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UHIMA Technologies

Türkiye . 942 parts In-Stock

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Corohmni

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Overview

Enhance the performance of your electronic devices with the 2N6487AU Power Bipolar Junction Transistor from Onsemi. Known for its high-quality manufacturing, Onsemi delivers reliable components for a wide range of applications. This NPN transistor is perfect for switching applications, offering a maximum collector-emitter voltage of 60V and a maximum collector current of 15A. Upgrade your projects with the 2N6487AU's exceptional value and benefits, providing efficient power control and optimal performance. Trust Onsemi for superior quality and innovation in electronic components.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and resistance to environmental factors, making the transistor suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering versatility in circuit design.

Configuration: SINGLE

Simplifies circuit design by having only one transistor in the package, making it easier to handle and implement.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in high-speed switching circuits.

Maximum Operating Temperature: 150 °C

Withstands high temperatures, allowing the transistor to operate effectively in a wide range of environments.

Maximum Collector-Emitter Voltage: 60 V

Provides a high voltage rating, suitable for various switching applications while ensuring safe operation.

Maximum Collector Current (IC): 15 A

Capable of handling high current levels, making it suitable for applications requiring robust performance.

Nominal Transition Frequency (fT): 5 MHz

Offers high frequency capability, ideal for applications where fast switching speeds are required.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N6487AU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

5

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N6487AU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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