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2N6487BU

Onsemi

2N6487BU by Onsemi

2N6487BU by Onsemi is a NPN BJT transistor with max. Vce of 60V, Ic of 15A, and hFE of 5. Ideal for switching applications due to its single configuration and high collector current capacity. Operates at up to 150 °C making it suitable for various power electronics projects.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,838 parts In-Stock

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Vyrian

USA . 80 parts In-Stock

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80

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Native Components

USA . 167 parts In-Stock

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$0.257

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$0.247

167

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$0.247

Northwest PG Solutions

USA . 1,858 parts In-Stock

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$0.283

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$0.249

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$0.249

SupplyDigital Components

Austria . 8,212 parts In-Stock

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Problanco Electronics

Mexico . 8,159 parts In-Stock

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8,159

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TANS Electronics

Latvia . 7,318 parts In-Stock

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Kulean Microsystems

USA . 2,362 parts In-Stock

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Corphita

USA . 665 parts In-Stock

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UHIMA Technologies

Türkiye . 578 parts In-Stock

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Corohmni

South Africa . 106 parts In-Stock

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Overview

Unlock the power of innovation with the Onsemi 2N6487BU Power BJT transistor. Manufactured by Onsemi, a global leader in semiconductor technology, this NPN transistor is designed for switching applications with a maximum collector-emitter voltage of 60V and a maximum collector current of 15A. Its high-quality construction and reliability make it ideal for a wide range of electronic devices. Experience enhanced performance and efficiency with the Onsemi 2N6487BU, where quality meets value for all your power transistor needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring durability and reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in digital and switching applications, making this transistor versatile for various circuits.

Configuration: SINGLE

Simplifies circuit design and makes it easier to integrate into existing systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing high efficiency and fast switching speeds.

Package Shape: RECTANGULAR

Easy to handle and mount on PCBs, making it convenient for assembly and installation.

Terminal Form: THROUGH-HOLE

Allows for easy soldering onto a PCB, providing a secure electrical connection.

No. of Terminals: 3

Simple and straightforward connection setup, reducing the chances of errors during installation.

Package Style (Meter): FLANGE MOUNT

Enables easy mounting and secure attachment to a heatsink for efficient heat dissipation.

Minimum DC Current Gain (hFE): 5

Provides consistent and stable amplification of current in the circuit.

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments, ensuring reliability in harsh conditions.

Maximum Collector-Emitter Voltage: 60 V

Allows for high voltage applications without the risk of breakdown or damage.

Transistor Element Material: SILICON

Silicon-based transistors have good electrical properties and are widely used in electronic devices.

Maximum Collector Current (IC): 15 A

Capable of handling high currents, making it suitable for power applications.

Terminal Finish: TIN LEAD

Provides good solderability and ensures a secure electrical connection.

Terminal Position: SINGLE

Simplifies the connection setup and prevents confusion during installation.

Case Connection: COLLECTOR

Clearly defines the connection point for the collector terminal, aiding in proper wiring.

Nominal Transition Frequency (fT): 5 MHz

Indicates the maximum frequency at which the transistor can operate effectively, suitable for many applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N6487BU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

5

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N6487BU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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