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2N6487AK

Onsemi

2N6487AK by Onsemi

The Onsemi 2N6487AK is a NPN power BJT with max. collector-emitter voltage of 60V and max. collector current of 15A. With a min. DC current gain of 5, it's ideal for switching applications at up to 150 °C operating temperature. This transistor has a flange mount package style and silicon element material, making it suitable for high-power switching circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,247 parts In-Stock

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Vyrian

USA . 1,701 parts In-Stock

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Native Components

USA . 565 parts In-Stock

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$55.165

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$52.958

565

$55.165

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$52.958

Northwest PG Solutions

USA . 2,140 parts In-Stock

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$60.682

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Kulean Microsystems

USA . 7,576 parts In-Stock

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SupplyDigital Components

Austria . 6,546 parts In-Stock

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TANS Electronics

Latvia . 6,324 parts In-Stock

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Corphita

USA . 2,410 parts In-Stock

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UHIMA Technologies

Türkiye . 685 parts In-Stock

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685

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Problanco Electronics

Mexico . 570 parts In-Stock

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Corohmni

South Africa . 394 parts In-Stock

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Overview

Unleash the power of innovation with the 2N6487AK by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors (BJT) known for their reliability and performance. Ideal for switching applications, this NPN transistor offers customers unparalleled value and benefits. With a maximum collector-emitter voltage of 60V and a maximum collector current of 15A, the 2N6487AK is designed to exceed expectations. Elevate your projects with the trusted technology of Onsemi and experience the difference for yourself.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a long lifespan in various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching circuits and offer reliable performance in a wide range of applications.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to work with for various electronic projects.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Package Shape: RECTANGULAR

Allows for easy mounting and integration into electronic devices or circuits, offering a convenient form factor.

Terminal Form: THROUGH-HOLE

Enables easy soldering onto a PCB, providing a secure mechanical and electrical connection.

No. of Terminals: 3

Features a standard number of terminals for basic transistor connections, allowing for easy setup and usage.

Package Style (Meter): FLANGE MOUNT

Facilitates secure mounting and heat dissipation, ensuring stable operation even under high power conditions.

Minimum DC Current Gain (hFE): 5

Provides sufficient gain for signal amplification and switching operations, enhancing overall performance.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, making it suitable for a wide range of industrial and commercial applications.

Maximum Collector-Emitter Voltage: 60 V

Offers a high voltage rating, enabling the transistor to handle a variety of voltage levels without breakdown.

Transistor Element Material: SILICON

Silicon-based transistors are known for their reliable performance and longevity, making this product a dependable choice.

Maximum Collector Current (IC): 15 A

Supports high current loads, allowing for power switching applications with ease.

Terminal Finish: TIN LEAD

Features a reliable terminal finish for soldering, ensuring a strong and durable connection in electronic circuits.

Terminal Position: SINGLE

Simplifies wiring and connections, minimizing the risk of errors during installation or maintenance.

Case Connection: COLLECTOR

Provides easy access to the collector terminal, enabling efficient circuit design and connection.

Nominal Transition Frequency (fT): 5 MHz

Delivers high-frequency performance, making it suitable for applications that require fast switching speeds.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N6487AK attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

5

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N6487AK Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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