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BUD42D-1G

Onsemi

BUD42D-1G by Onsemi

BUD42D-1G by Onsemi is a NPN BJT transistor with 350V VCE, 4A IC, and 25W Ptot. Ideal for switching applications, it has a single configuration with built-in diode in a plastic/epoxy package suitable for through-hole mounting.

Median Price

$0.452

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,925 parts In-Stock

1+ parts

-

100+ parts

$0.436

1k+ parts

$0.362

10k+ parts

$0.323

1,925

-

$0.436

$0.362

$0.323

DigiKey

USA . 1,925 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.550

10k+ parts

-

1,925

-

-

$0.550

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Verical

USA . 1,800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.452

10k+ parts

$0.403

1,800

-

-

$0.452

$0.403

Distributors (In-Stock)

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Digiode

USA . 603 parts In-Stock

1+ parts

$0.339

100+ parts

-

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603

$0.339

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Vyrian

USA . 13,131 parts In-Stock

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13,131

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Distributors (Availability)

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Corphita

USA . 592 parts In-Stock

1+ parts

$0.321

100+ parts

-

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592

$0.321

-

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Corohmni

South Africa . 446 parts In-Stock

1+ parts

$1.390

100+ parts

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446

$1.390

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

1+ parts

$2.028

100+ parts

$1.845

1k+ parts

$1.663

10k+ parts

-

2,500

$2.028

$1.845

$1.663

-

AZTECH Wire

Italy . 1,052 parts In-Stock

1+ parts

$9.750

100+ parts

-

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1,052

$9.750

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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56,986

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QUARKTWIN TECHNOLOGY LTD

USA . 17,054 parts In-Stock

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17,054

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Kepictronics

USA . 13,000 parts In-Stock

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13,000

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Problanco Electronics

Mexico . 7,996 parts In-Stock

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TANS Electronics

Latvia . 7,332 parts In-Stock

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7,332

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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3,700

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Continental Prestige Electronics

USA . 1,925 parts In-Stock

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$0.323

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1,925

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$0.323

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SupplyDigital Components

Austria . 1,395 parts In-Stock

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1,395

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Northwest PG Solutions

USA . 1,049 parts In-Stock

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1,049

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UHIMA Technologies

Türkiye . 773 parts In-Stock

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773

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Perfect Parts

USA . 661 parts In-Stock

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661

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Native Components

USA . 405 parts In-Stock

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405

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Kulean Microsystems

USA . 368 parts In-Stock

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368

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Overview

Elevate your electronic projects with the BUD42D-1G by Onsemi, a top-quality power bipolar junction transistor designed for switching applications. Manufactured with precision and expertise by Onsemi, this NPN transistor offers reliability and performance like no other. With a maximum collector-emitter voltage of 350V and a maximum collector current of 4A, this transistor is perfect for a wide range of applications. Trust in Onsemi's reputation for excellence and choose the BUD42D-1G for all your project needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection, making the product suitable for various applications.

Polarity or Channel Type: NPN

The NPN configuration allows for amplification of current flow and switching capability, making it versatile for different circuit designs.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design as it eliminates the need for an external diode, while the single configuration reduces space requirements.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in controlling circuits.

Maximum Power Dissipation (Abs): 25 W

With a high power dissipation capability, this transistor can handle higher power loads without overheating, increasing its overall reliability.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperatures, making it suitable for industrial applications.

Maximum Collector-Emitter Voltage: 350 V

The high collector-emitter voltage rating allows for the transistor to be used in a wide range of high voltage applications.

Maximum Collector Current (IC): 4 A

The high collector current rating of 4 A allows for the transistor to handle higher current loads, making it suitable for power circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUD42D-1G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN ANTISATURATION NETWORK

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

350 V

Minimum DC Current Gain (hFE):

10

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BUD42D-1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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