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BUD44D2T4

Onsemi

BUD44D2T4 by Onsemi

BUD44D2T4 by Onsemi is a NPN Power BJT with 400V VCEO, 2A IC, and 13MHz fT. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals. Operating up to 150 °C, this transistor features a built-in diode and high DC current gain of hFE=8.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,950 parts In-Stock

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Digiode

USA . 463 parts In-Stock

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Native Components

USA . 352 parts In-Stock

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$0.130

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$0.124

352

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Northwest PG Solutions

USA . 1,072 parts In-Stock

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$0.143

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Kulean Microsystems

USA . 7,872 parts In-Stock

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Problanco Electronics

Mexico . 5,400 parts In-Stock

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TANS Electronics

Latvia . 2,287 parts In-Stock

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Corphita

USA . 1,363 parts In-Stock

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Corohmni

South Africa . 385 parts In-Stock

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UHIMA Technologies

Türkiye . 185 parts In-Stock

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SupplyDigital Components

Austria . 151 parts In-Stock

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Overview

Elevate your power management solutions with the BUD44D2T4 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers exceptional quality and reliability in their Power Bipolar Junction Transistors (BJT). This NPN transistor with a built-in diode is perfect for switching applications, offering high performance and efficiency. With a maximum collector-emitter voltage of 400V and a maximum collector current of 2A, this transistor provides the versatility and durability you need for your projects. Trust Onsemi to deliver cutting-edge technology that meets your power management needs with the BUD44D2T4.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good insulation and protection for the transistor, ensuring its longevity and durability.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this transistor versatile and suitable for a wide range of uses.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode in this transistor simplifies circuit design and can provide protection against reverse voltage spikes, making it a convenient choice for many applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can efficiently control the flow of current in electronic circuits, making it ideal for use in power control and voltage regulation.

Surface Mount: YES

Surface mount transistors are easy to install and take up less space on a circuit board, making them ideal for compact electronic devices and applications with limited space.

Maximum Collector-Emitter Voltage: 400 V

With a high maximum voltage rating, this transistor can handle higher voltage applications, providing reliability and safety in circuits where high voltages are present.

Maximum Collector Current (IC): 2 A

A high collector current rating allows this transistor to handle higher current loads, making it suitable for power switching applications that require a larger current capacity.

Nominal Transition Frequency (fT): 13 MHz

The high transition frequency of this transistor allows for fast switching speeds and high-frequency operation, making it suitable for applications that require rapid switching and signal amplification.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUD44D2T4 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN EFFICIENT ANTISATURATION NETWORK

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

400 V

Minimum DC Current Gain (hFE):

8

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUD44D2T4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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