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BUD42D-1

Onsemi

BUD42D-1 by Onsemi

BUD42D-1 by Onsemi is a NPN Power BJT with 25W power dissipation, 350V max collector-emitter voltage, and 4A max collector current. Ideal for switching applications, it features a built-in diode in a plastic/epoxy package with through-hole terminals. Operating up to 150 °C, it has a min hFE of 10 and tin lead finish.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 895 parts In-Stock

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895

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Digiode

USA . 400 parts In-Stock

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400

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Native Components

USA . 149 parts In-Stock

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$206.570

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$198.307

149

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$198.307

Northwest PG Solutions

USA . 1,306 parts In-Stock

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$227.227

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SupplyDigital Components

Austria . 7,271 parts In-Stock

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Kulean Microsystems

USA . 2,415 parts In-Stock

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Problanco Electronics

Mexico . 2,384 parts In-Stock

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UHIMA Technologies

Türkiye . 730 parts In-Stock

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730

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Corohmni

South Africa . 375 parts In-Stock

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Corphita

USA . 292 parts In-Stock

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TANS Electronics

Latvia . 40 parts In-Stock

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Overview

Experience superior performance and reliability with the BUD42D-1 Power Bipolar Junction Transistor by Onsemi. Designed for switching applications, this NPN transistor boasts a built-in diode for added convenience. With a maximum collector-emitter voltage of 350V and a maximum collector current of 4A, this transistor offers exceptional power dissipation of 25W. Its durable plastic/epoxy package body ensures long-lasting quality. Trust Onsemi's expertise in semiconductor manufacturing to deliver top-of-the-line products like the BUD42D-1 that exceed industry standards. Upgrade your electronic projects today with the unmatched value and benefits this transistor provides.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a cost-effective and lightweight option for the product.

Polarity or Channel Type: NPN

Suitable for a wide range of applications including amplification and switching.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by incorporating a diode within the transistor package.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance.

Package Shape: RECTANGULAR

Easy to mount and configure within electronic circuits.

Terminal Form: THROUGH-HOLE

Simple and secure method for soldering the transistor onto a circuit board.

No. of Terminals: 3

Provides the necessary connections for the transistor's operation.

Maximum Power Dissipation (Abs): 25 W

Capable of handling higher power levels without overheating.

Package Style (Meter): IN-LINE

Helps in easy identification and installation of the component.

Minimum DC Current Gain (hFE): 10

Ensures reliable amplification of current in the circuit.

Maximum Operating Temperature: 150 °C

Can operate efficiently at elevated temperatures without performance degradation.

Maximum Collector-Emitter Voltage: 350 V

Allows for higher voltage applications while protecting the transistor.

Transistor Element Material: SILICON

Provides good thermal conductivity and reliability for the transistor.

Maximum Collector Current (IC): 4 A

Capable of handling higher current levels without failure.

Terminal Finish: TIN LEAD

Provides a reliable connection and protects the terminals from corrosion.

Terminal Position: SINGLE

Simplifies the connection of the transistor within a circuit.

Case Connection: COLLECTOR

Clearly indicates the connection point for the collector terminal.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUD42D-1 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN ANTISATURATION NETWORK

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

350 V

Minimum DC Current Gain (hFE):

10

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BUD42D-1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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