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BUD42DT4G

Onsemi

BUD42DT4G by Onsemi

BUD42DT4G by Onsemi is a NPN Power BJT with 25W power dissipation, 350V max collector-emitter voltage, and 4A max collector current. Ideal for switching applications, it features a built-in diode in a small outline package suitable for surface mount assembly.

Median Price

$0.439

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 8,990 parts In-Stock

1+ parts

-

100+ parts

$0.423

1k+ parts

$0.351

10k+ parts

$0.313

8,990

-

$0.423

$0.351

$0.313

DigiKey

USA . 8,990 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.530

10k+ parts

-

8,990

-

-

$0.530

-

Verical

USA . 8,990 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.439

10k+ parts

$0.391

8,990

-

-

$0.439

$0.391

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 647 parts In-Stock

1+ parts

$0.330

100+ parts

-

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647

$0.330

-

-

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Vyrian

USA . 697 parts In-Stock

1+ parts

$0.347

100+ parts

-

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697

$0.347

-

-

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ACDS - Activité Composants Distribution Service

France . 2,205 parts In-Stock

1+ parts

-

100+ parts

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2,205

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Bristol Electronics

USA . 2,205 parts In-Stock

1+ parts

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2,205

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Dan-Mar Components

USA . 2,205 parts In-Stock

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2,205

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,837 parts In-Stock

1+ parts

$0.312

100+ parts

-

1k+ parts

-

10k+ parts

-

1,837

$0.312

-

-

-

Corohmni

South Africa . 99 parts In-Stock

1+ parts

$0.347

100+ parts

-

1k+ parts

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-

99

$0.347

-

-

-

Advanced Electronics

New Zealand . 200 parts In-Stock

1+ parts

$1.886

100+ parts

$1.716

1k+ parts

$1.547

10k+ parts

-

200

$1.886

$1.716

$1.547

-

Native Components

USA . 209 parts In-Stock

1+ parts

$130.088

100+ parts

-

1k+ parts

-

10k+ parts

$124.884

209

$130.088

-

-

$124.884

Northwest PG Solutions

USA . 1,836 parts In-Stock

1+ parts

$143.097

100+ parts

-

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1,836

$143.097

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Kepictronics

USA . 13,000 parts In-Stock

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13,000

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Continental Prestige Electronics

USA . 8,990 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.313

10k+ parts

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8,990

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-

$0.313

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TANS Electronics

Latvia . 7,240 parts In-Stock

1+ parts

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7,240

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Problanco Electronics

Mexico . 5,773 parts In-Stock

1+ parts

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5,773

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Kulean Microsystems

USA . 2,879 parts In-Stock

1+ parts

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2,879

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

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100+ parts

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2,000

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A-Z Elektronik GmbH

Germany . 1,721 parts In-Stock

1+ parts

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1,721

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SupplyDigital Components

Austria . 1,530 parts In-Stock

1+ parts

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1,530

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Alle Elektronik GmbH

Germany . 1,147 parts In-Stock

1+ parts

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100+ parts

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1,147

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UHIMA Technologies

Türkiye . 208 parts In-Stock

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208

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Overview

Get ready to experience the power of innovation with the BUD42DT4G by Onsemi! As a leading manufacturer in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors for various applications like switching. This NPN transistor with a built-in diode offers customers exceptional value, benefits, and advantages. With a maximum collector-emitter voltage of 350V and a maximum collector current of 4A, this transistor is perfect for high-power applications. Say goodbye to inefficiency and hello to superior performance with the BUD42DT4G!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, ideal for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, providing good performance and reliability.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and saves space, making the transistor convenient for use in compact electronic devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable operation in various electronic circuits.

Maximum Power Dissipation (Abs): 25 W

With a high power dissipation of 25 W, this transistor can handle significant power levels, making it suitable for demanding applications.

Maximum Collector-Emitter Voltage: 350 V

The high collector-emitter voltage rating of 350 V allows for the transistor to be used in high voltage circuits without risking damage.

Maximum Collector Current (IC): 4 A

The high collector current rating of 4 A ensures that the transistor can handle large current loads, making it versatile for different applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this transistor can withstand elevated temperatures, ensuring reliable performance in harsh environments.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUD42DT4G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN ANTISATURATION NETWORK

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

350 V

Minimum DC Current Gain (hFE):

10

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BUD42DT4G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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