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BUD42D

Onsemi

BUD42D by Onsemi

BUD42D by Onsemi is a NPN BJT transistor with 25W power dissipation, 350V max collector-emitter voltage, and 4A max collector current. Ideal for switching applications, it features a built-in diode in a small outline package suitable for surface mount assembly.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Bristol Electronics

USA . 1,949 parts In-Stock

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Digiode

USA . 1,624 parts In-Stock

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Vyrian

USA . 429 parts In-Stock

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429

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 29,222 parts In-Stock

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Kepictronics

USA . 13,000 parts In-Stock

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Assy Fe

Spain . 8,943 parts In-Stock

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TANS Electronics

Latvia . 6,236 parts In-Stock

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Kulean Microsystems

USA . 5,850 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,658 parts In-Stock

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SupplyDigital Components

Austria . 5,610 parts In-Stock

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Problanco Electronics

Mexico . 4,384 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,772 parts In-Stock

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Corphita

USA . 2,175 parts In-Stock

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Northwest PG Solutions

USA . 1,255 parts In-Stock

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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UHIMA Technologies

Türkiye . 413 parts In-Stock

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Corohmni

South Africa . 248 parts In-Stock

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Native Components

USA . 72 parts In-Stock

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Overview

Unleash the power of innovation with the BUD42D by Onsemi! Crafted with precision and expertise, this Power Bipolar Junction Transistor (BJT) sets the standard for high-quality performance. Whether you're looking to amplify signals or switch circuits, this NPN transistor with a built-in diode offers unparalleled reliability and efficiency. With a maximum collector-emitter voltage of 350V and a maximum operating temperature of 150 °C, the BUD42D is perfect for a wide range of applications. Trust in Onsemi's reputation for excellence and experience the value and benefits of this cutting-edge product today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for easy handling and installation.

Polarity or Channel Type: NPN

NPN configuration allows for high efficiency in switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode simplifies circuit design and saves space.

Transistor Application: SWITCHING

Ideal for switching applications with fast on/off speeds.

Surface Mount: YES

Suitable for surface mount technology, making it versatile for various PCB designs.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient placement on PCBs.

Terminal Form: GULL WING

Gull wing terminals are easy to solder and provide secure connections.

Maximum Power Dissipation (Abs): 25 W

With a high power dissipation capacity, it can handle demanding applications.

Package Style (Meter): SMALL OUTLINE

Compact size saves space on the PCB and allows for dense circuit designs.

Minimum DC Current Gain (hFE): 10

High DC current gain ensures reliable and stable performance.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without compromising performance.

Maximum Collector-Emitter Voltage: 350 V

High collector-emitter voltage rating for robust performance in demanding applications.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability for long-term use.

Maximum Collector Current (IC): 4 A

High collector current rating allows for handling large current loads.

Terminal Finish: TIN LEAD

Tin-lead finish provides good solderability and corrosion resistance.

Terminal Position: SINGLE

Single terminal position for easy integration into circuit designs.

Case Connection: COLLECTOR

Collector case connection for convenient circuit layout and thermal management.

Peak Reflow Temperature °C: 235

Can withstand high temperatures during reflow soldering processes.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUD42D attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN ANTISATURATION NETWORK

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

350 V

Minimum DC Current Gain (hFE):

10

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BUD42D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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