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BUD43D2T4

Onsemi

BUD43D2T4 by Onsemi

BUD43D2T4 by Onsemi is a NPN Power BJT with 25W power dissipation, 400V max collector-emitter voltage, and 2A max collector current. Ideal for switching applications, it features a built-in diode in a small outline package suitable for surface mount assembly.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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ComSIT Distribution GmbH

Germany . 14,785 parts In-Stock

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A2Z Electronics, Inc.

USA . 2,500 parts In-Stock

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2,500

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Digiode

USA . 1,490 parts In-Stock

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1,490

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Vyrian

USA . 163 parts In-Stock

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Kulean Microsystems

USA . 6,180 parts In-Stock

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6,180

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Problanco Electronics

Mexico . 3,668 parts In-Stock

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3,668

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Northwest PG Solutions

USA . 2,182 parts In-Stock

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SupplyDigital Components

Austria . 1,723 parts In-Stock

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1,723

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Corphita

USA . 949 parts In-Stock

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TANS Electronics

Latvia . 870 parts In-Stock

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Native Components

USA . 483 parts In-Stock

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483

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UHIMA Technologies

Türkiye . 389 parts In-Stock

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Corohmni

South Africa . 143 parts In-Stock

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Overview

Experience the superior quality and performance of the BUD43D2T4 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers reliable power bipolar junction transistors that are perfect for switching applications. With a maximum collector-emitter voltage of 400V and a maximum power dissipation of 25W, this NPN transistor offers unmatched efficiency and durability. The BUD43D2T4's single configuration with built-in diode and small outline package make it ideal for various electronic projects. Trust Onsemi to provide you with high-quality components that will elevate your designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan and reliable performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering versatility and flexibility.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for efficient switching and protection against reverse currents, enhancing functionality.

Transistor Application: SWITCHING

Designed specifically for switching applications, making it suitable for a variety of electronic circuits and systems.

Surface Mount: YES

Enables easy and convenient installation on circuit boards, saving space and simplifying assembly processes.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, ensuring stable performance in challenging environmental conditions.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUD43D2T4 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

400 V

Minimum DC Current Gain (hFE):

8

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUD43D2T4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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