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BUD44D2

Onsemi

BUD44D2 by Onsemi

BUD44D2 by Onsemi is a NPN Power BJT with 400V VCEO, 2A IC, and 25W Ptot. Ideal for switching applications, it features a built-in diode in a small outline package suitable for surface mount assembly. With hFE of min 8 and fT of 13MHz, this transistor operates up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,121 parts In-Stock

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Digiode

USA . 1,275 parts In-Stock

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1,275

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Distributors (Availability)

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Native Components

USA . 278 parts In-Stock

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$6.273

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278

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Kepictronics

USA . 11,000 parts In-Stock

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SupplyDigital Components

Austria . 7,480 parts In-Stock

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Problanco Electronics

Mexico . 7,062 parts In-Stock

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TANS Electronics

Latvia . 4,761 parts In-Stock

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Kulean Microsystems

USA . 2,669 parts In-Stock

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Assy Fe

Spain . 1,750 parts In-Stock

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Corphita

USA . 1,491 parts In-Stock

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Northwest PG Solutions

USA . 1,407 parts In-Stock

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UHIMA Technologies

Türkiye . 542 parts In-Stock

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Corohmni

South Africa . 327 parts In-Stock

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Overview

Unleash the power of innovation with the BUD44D2 from Onsemi, a trusted leader in semiconductor technology. This Power Bipolar Junction Transistor (BJT) with a built-in diode is designed for switching applications, offering superior performance and reliability. With a maximum collector-emitter voltage of 400V and a high DC current gain, this NPN transistor is perfect for a wide range of electronic devices. Experience the quality and value that Onsemi brings to every product, and elevate your designs with the BUD44D2.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection to the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN configuration allows for easy integration into circuit designs and compatibility with other components.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode simplifies circuitry design and protects from reverse currents, making the transistor efficient and reliable.

Transistor Application: SWITCHING

Designed for switching applications, making it ideal for use in power control circuits and electronic devices.

Surface Mount: YES

Surface mount capability enables easy and compact PCB assembly, saving space and reducing production costs.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient placement on PCBs and facilitates heat dissipation for improved performance.

Terminal Form: GULL WING

Gull wing terminals provide strong mechanical connections and ease of soldering during assembly, ensuring reliability in operation.

Maximum Power Dissipation (Abs): 25 W

High power dissipation capacity allows the transistor to handle substantial loads without overheating, ensuring long-term operation.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves PCB space and enhances thermal performance, making it suitable for compact electronic devices.

Minimum DC Current Gain (hFE): 8

Minimum DC current gain ensures consistent amplification in various operating conditions, providing stability in signal processing.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the transistor to withstand harsh environmental conditions, ensuring reliable operation in diverse applications.

Maximum Collector-Emitter Voltage: 400 V

High collector-emitter voltage rating enables the transistor to handle high voltage loads safely, expanding its range of applications.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability, ensuring stable operation and long lifespan of the transistor.

Maximum Collector Current (IC): 2 A

High collector current rating allows the transistor to handle significant current flow, making it suitable for power applications.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and conductivity, ensuring strong electrical connections for reliable performance.

Terminal Position: SINGLE

Single terminal position simplifies PCB layout and reduces assembly complexity, making installation easier and more efficient.

Case Connection: COLLECTOR

Collector connection enables efficient heat dissipation and current flow control, enhancing overall performance and reliability of the transistor.

Nominal Transition Frequency (fT): 13 MHz

High nominal transition frequency allows for fast switching speed and high-frequency operation, making the transistor suitable for high-speed applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUD44D2 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN EFFICIENT ANTISATURATION NETWORK

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

400 V

Minimum DC Current Gain (hFE):

8

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUD44D2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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