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BUD43B

Onsemi

BUD43B by Onsemi

BUD43B by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 350V and max. collector current of 2A. It has a min. DC current gain of 6 and nominal transition frequency of 13MHz, suitable for switching applications in surface mount configurations.

Median Price

$0.185

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

$0.185

1k+ parts

$0.153

10k+ parts

$0.137

3,000

-

$0.185

$0.153

$0.137

DigiKey

USA . 3,000 parts In-Stock

1+ parts

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$0.230

3,000

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$0.230

Verical

USA . 3,000 parts In-Stock

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$0.171

3,000

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$0.171

Distributors (In-Stock)

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Vyrian

USA . 2,244 parts In-Stock

1+ parts

$0.127

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2,244

$0.127

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Digiode

USA . 2,157 parts In-Stock

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$0.144

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2,157

$0.144

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Distributors (Availability)

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Corohmni

South Africa . 140 parts In-Stock

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$0.127

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140

$0.127

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Corphita

USA . 2,392 parts In-Stock

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$0.137

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2,392

$0.137

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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56,986

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QUARKTWIN TECHNOLOGY LTD

USA . 24,003 parts In-Stock

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24,003

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Kepictronics

USA . 13,000 parts In-Stock

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Kulean Microsystems

USA . 5,515 parts In-Stock

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Problanco Electronics

Mexico . 4,988 parts In-Stock

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TANS Electronics

Latvia . 3,085 parts In-Stock

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Continental Prestige Electronics

USA . 3,000 parts In-Stock

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$0.137

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Northwest PG Solutions

USA . 1,023 parts In-Stock

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SupplyDigital Components

Austria . 918 parts In-Stock

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Native Components

USA . 657 parts In-Stock

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UHIMA Technologies

Türkiye . 619 parts In-Stock

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619

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Overview

Boost your power control applications with the BUD43B by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors (BJTs) that offer unparalleled performance and reliability. Ideal for switching applications, this NPN transistor provides a maximum collector-emitter voltage of 350V and a maximum collector current of 2A. With a minimum DC current gain of 6 and a nominal transition frequency of 13MHz, the BUD43B ensures efficient power management. Trust Onsemi to provide you with the innovative solutions you need to enhance your projects. Choose the BUD43B for superior performance and unmatched value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the transistor lightweight and durable, ensuring longevity and ease of handling during installation.

Polarity or Channel Type: NPN

The NPN polarity allows for easy integration with other NPN components, providing compatibility and versatility in circuit design.

Configuration: SINGLE

The single configuration simplifies circuit design and maintenance, making the transistor easy to work with for various switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor ensures efficient and reliable performance when used in electronic devices or equipment.

Surface Mount: YES

Being surface mountable, this transistor can be easily mounted on PCBs, saving space and enabling automated assembly processes.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient placement on a circuit board, maximizing space utilization and enhancing overall design aesthetics.

No. of Terminals: 2

Having only 2 terminals simplifies the connection process, reducing the chances of wiring errors and ensuring reliable performance.

Package Style (Meter): SMALL OUTLINE

The small outline package style makes this transistor suitable for compact electronic devices where space is limited, without compromising on functionality.

Minimum DC Current Gain (hFE): 6

With a minimum DC current gain of 6, this transistor provides consistent amplification of current signals, ensuring stable and predictable output.

Maximum Collector-Emitter Voltage: 350 V

The high maximum collector-emitter voltage of 350V ensures that the transistor can handle higher voltage applications with ease and reliability.

Transistor Element Material: SILICON

Silicon is a commonly used material for transistors due to its excellent performance characteristics, providing high conductivity and temperature tolerance.

Maximum Collector Current (IC): 2 A

With a maximum collector current of 2A, this transistor can effectively handle medium to high current loads, making it suitable for a wide range of applications.

Terminal Finish: Tin/Lead (Sn/Pb)

The tin/lead terminal finish ensures good solderability, making it easier to secure connections and preventing potential soldering defects during assembly.

Terminal Position: SINGLE

The single terminal position simplifies the installation process and reduces the risk of misalignment, ensuring proper electrical connections.

Nominal Transition Frequency (fT): 13 MHz

With a nominal transition frequency of 13MHz, this transistor can switch signals at a high frequency, making it suitable for fast-switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUD43B attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

350 V

Configuration:

Minimum DC Current Gain (hFE):

6

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUD43B Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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