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BUD43D2-1

Onsemi

BUD43D2-1 by Onsemi

BUD43D2-1 by Onsemi is a NPN Power BJT with 400V VCEO, 25W Ptot, and 2A IC. Ideal for switching applications, it features a built-in diode in a plastic/epoxy package with through-hole terminals. Operating up to 150 °C, this transistor has an hFE of min 8 and fT of 13MHz.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,790 parts In-Stock

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Vyrian

USA . 1,546 parts In-Stock

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Native Components

USA . 757 parts In-Stock

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$514.016

100+ parts

$503.736

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$498.596

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$493.456

757

$514.016

$503.736

$498.596

$493.456

Northwest PG Solutions

USA . 1,398 parts In-Stock

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$565.418

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SupplyDigital Components

Austria . 8,215 parts In-Stock

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Kulean Microsystems

USA . 2,701 parts In-Stock

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Corphita

USA . 2,359 parts In-Stock

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Problanco Electronics

Mexico . 2,198 parts In-Stock

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TANS Electronics

Latvia . 1,256 parts In-Stock

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UHIMA Technologies

Türkiye . 485 parts In-Stock

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Corohmni

South Africa . 391 parts In-Stock

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Overview

Discover the power of the BUD43D2-1 by Onsemi, a top-quality Power Bipolar Junction Transistor perfect for switching applications. With its innovative design and high performance, this NPN transistor offers reliable operation and efficient power dissipation. Whether you're looking to enhance your electronic projects or upgrade your equipment, the BUD43D2-1 delivers exceptional value and benefits. Trust in Onsemi's reputation for excellence and take advantage of the advantages this transistor brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the package lightweight and durable, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering good performance in a wide range of circuits.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for more efficient switching operation and protection against voltage spikes, enhancing the reliability of the transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides fast switching speeds and high efficiency, making it ideal for power control and digital circuits.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy mounting on PCBs and provides a compact footprint for space-constrained designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer strong mechanical connections and are easier to solder onto PCBs, ensuring reliable operation in harsh environments.

Maximum Power Dissipation (Abs): 25 W

With a high power dissipation rating, this transistor can handle relatively high power levels without overheating, making it suitable for demanding applications.

Package Style (Meter): IN-LINE

The in-line package style allows for easy integration into existing circuits and provides a standardized form factor for compatibility with a wide range of applications.

Minimum DC Current Gain (hFE): 8

A minimum DC current gain of 8 ensures consistent and reliable amplification of input signals, providing stable performance in various circuit configurations.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this transistor can withstand elevated temperatures without compromising performance, ensuring reliability in demanding environments.

Maximum Collector-Emitter Voltage: 400 V

The high maximum collector-emitter voltage rating of 400V allows this transistor to handle high voltage levels, making it suitable for power supply and high voltage circuit applications.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance and reliability, making them the material of choice for a wide range of electronic applications.

Maximum Collector Current (IC): 2 A

With a maximum collector current rating of 2A, this transistor can handle moderate current levels, making it suitable for power switching and control applications.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides good solderability and corrosion resistance, ensuring reliable electrical connections and long-term performance.

Terminal Position: SINGLE

The single terminal position simplifies circuit integration and ensures proper orientation during installation, providing ease of use for the end user.

Case Connection: COLLECTOR

The case connection at the collector terminal allows for efficient heat dissipation and helps maintain the transistor within its operating temperature range, ensuring long-term reliability.

Nominal Transition Frequency (fT): 13 MHz

The nominal transition frequency of 13 MHz indicates the speed at which the transistor can switch between on and off states, making it suitable for high-frequency applications such as RF amplifiers and oscillators.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUD43D2-1 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

400 V

Minimum DC Current Gain (hFE):

8

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUD43D2-1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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