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BUD42DG

Onsemi

BUD42DG by Onsemi

BUD42DG by Onsemi is a NPN BJT transistor with 25W power dissipation, 350V max collector-emitter voltage, and 4A max collector current. Ideal for switching applications, it features a built-in diode in a small outline package suitable for surface mount assembly.

Median Price

$0.398

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

$0.383

1k+ parts

$0.318

10k+ parts

$0.283

3,000

-

$0.383

$0.318

$0.283

DigiKey

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.480

10k+ parts

-

3,000

-

-

$0.480

-

Verical

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.398

10k+ parts

$0.354

3,000

-

-

$0.398

$0.354

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 397 parts In-Stock

1+ parts

$0.298

100+ parts

-

1k+ parts

-

10k+ parts

-

397

$0.298

-

-

-

Vyrian

USA . 278 parts In-Stock

1+ parts

$0.314

100+ parts

-

1k+ parts

-

10k+ parts

-

278

$0.314

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 912 parts In-Stock

1+ parts

$0.283

100+ parts

-

1k+ parts

-

10k+ parts

-

912

$0.283

-

-

-

Corohmni

South Africa . 255 parts In-Stock

1+ parts

$0.314

100+ parts

-

1k+ parts

-

10k+ parts

-

255

$0.314

-

-

-

SupplyDigital Components

Austria . 6,949 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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6,949

-

-

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Kulean Microsystems

USA . 6,678 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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6,678

-

-

-

-

TANS Electronics

Latvia . 4,872 parts In-Stock

1+ parts

-

100+ parts

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4,872

-

-

-

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Continental Prestige Electronics

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.284

10k+ parts

-

3,000

-

-

$0.284

-

Northwest PG Solutions

USA . 2,174 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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2,174

-

-

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Problanco Electronics

Mexico . 1,996 parts In-Stock

1+ parts

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100+ parts

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1,996

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-

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Assy Fe

Spain . 1,000 parts In-Stock

1+ parts

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100+ parts

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1,000

-

-

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Kepictronics

USA . 675 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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675

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UHIMA Technologies

Türkiye . 404 parts In-Stock

1+ parts

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404

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Native Components

USA . 173 parts In-Stock

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173

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Overview

Boost your power management with the BUD42DG by Onsemi. This high-quality Power Bipolar Junction Transistor is a game-changer for switching applications, offering unparalleled performance and reliability. With a maximum collector-emitter voltage of 350V and a maximum power dissipation of 25W, this NPN transistor is a versatile solution for various electronic projects. Say goodbye to inefficiency and hello to seamless power control with the BUD42DG.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the transistor, ensuring reliability and longevity.

Polarity or Channel Type: NPN

NPN transistors are commonly used in electronic circuits, making this product versatile and widely compatible.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and can provide additional functionality in switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, making it efficient and effective in controlling the flow of current in electronic devices.

Surface Mount: YES

Suitable for surface mount technology, allowing for easy and compact integration into circuit boards.

Package Shape: RECTANGULAR

The rectangular shape enables efficient placement and soldering on circuit boards.

Terminal Form: GULL WING

The gull wing terminals provide secure mechanical and electrical connections in surface mount applications.

Maximum Power Dissipation (Abs): 25 W

Capable of handling high power dissipation, making it suitable for demanding applications.

Minimum DC Current Gain (hFE): 10

Provides consistent and reliable amplification of current in the circuit.

Maximum Operating Temperature: 150 °C

Can operate in high temperature environments without impacting performance or reliability.

Maximum Collector-Emitter Voltage: 350 V

Allows for a wide range of voltage input, increasing the versatility of the transistor.

Transistor Element Material: SILICON

Silicon technology offers high performance and reliability in electronic components.

Maximum Collector Current (IC): 4 A

Capable of handling high current loads, suitable for a variety of applications.

Terminal Finish: TIN

Tin finish provides a reliable and corrosion-resistant terminal connection.

Terminal Position: SINGLE

Simplifies circuit design and layout, making it easy to integrate into electronic systems.

Case Connection: COLLECTOR

The collector connection allows for efficient current flow and control in the circuit.

Peak Reflow Temperature °C: 260

Can withstand high temperatures during the reflow soldering process, ensuring reliable solder joints.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUD42DG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN ANTISATURATION NETWORK

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

350 V

Minimum DC Current Gain (hFE):

10

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BUD42DG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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