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BUD42DT4

Onsemi

BUD42DT4 by Onsemi

BUD42DT4 by Onsemi is a NPN Power BJT with 25W power dissipation, 350V max collector-emitter voltage, and 4A max collector current. It is used for switching applications in a small outline package with Gull Wing terminals.

Median Price

$0.386

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

$0.343

1k+ parts

$0.285

10k+ parts

$0.254

10,000

-

$0.343

$0.285

$0.254

DigiKey

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.430

10k+ parts

-

10,000

-

-

$0.430

-

Verical

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.386

10k+ parts

$0.318

10,000

-

-

$0.386

$0.318

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,503 parts In-Stock

1+ parts

$0.268

100+ parts

-

1k+ parts

-

10k+ parts

-

1,503

$0.268

-

-

-

Vyrian

USA . 1,292 parts In-Stock

1+ parts

$0.282

100+ parts

-

1k+ parts

-

10k+ parts

-

1,292

$0.282

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,451 parts In-Stock

1+ parts

$0.254

100+ parts

-

1k+ parts

-

10k+ parts

-

2,451

$0.254

-

-

-

Corohmni

South Africa . 382 parts In-Stock

1+ parts

$0.282

100+ parts

-

1k+ parts

-

10k+ parts

-

382

$0.282

-

-

-

Component Stockers USA

USA . 11,529 parts In-Stock

1+ parts

$0.290

100+ parts

$0.270

1k+ parts

$0.240

10k+ parts

$0.240

11,529

$0.290

$0.270

$0.240

$0.240

Native Components

USA . 597 parts In-Stock

1+ parts

$79.970

100+ parts

-

1k+ parts

-

10k+ parts

$76.772

597

$79.970

-

-

$76.772

Northwest PG Solutions

USA . 1,698 parts In-Stock

1+ parts

$87.968

100+ parts

-

1k+ parts

-

10k+ parts

-

1,698

$87.968

-

-

-

Continental Prestige Electronics

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.254

10k+ parts

-

10,000

-

-

$0.254

-

Problanco Electronics

Mexico . 5,122 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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5,122

-

-

-

-

TANS Electronics

Latvia . 3,662 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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3,662

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-

-

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SupplyDigital Components

Austria . 2,921 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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2,921

-

-

-

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UHIMA Technologies

Türkiye . 624 parts In-Stock

1+ parts

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100+ parts

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624

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Kulean Microsystems

USA . 334 parts In-Stock

1+ parts

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100+ parts

-

1k+ parts

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10k+ parts

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334

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-

Overview

Looking for a reliable Power Bipolar Junction Transistor (BJT) with exceptional quality and performance? Look no further than the BUD42DT4 by Onsemi. With a maximum collector-emitter voltage of 350V and a maximum collector current of 4A, this NPN transistor is perfect for switching applications. The built-in diode adds convenience, while the small outline package shape makes it easy to integrate into your designs. Trust Onsemi's reputation for excellence and choose the BUD42DT4 for all your power transistor needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring longevity and reliability in various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering versatility in design and functionality.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and protects against reverse voltage, making the transistor suitable for various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing fast switching speeds and efficient performance.

Surface Mount: YES

Allows for easy and convenient mounting on circuit boards, saving space and improving overall circuit layout.

Maximum Power Dissipation (Abs): 25 W

With a high power dissipation capability, this transistor can handle high power loads without overheating, ensuring reliable operation.

Maximum Collector-Emitter Voltage: 350 V

Supports high voltage applications, offering flexibility and compatibility with a wide range of circuit designs.

Maximum Collector Current (IC): 4 A

Capable of handling high current levels, making it suitable for applications that require robust performance.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUD42DT4 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN ANTISATURATION NETWORK

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

350 V

Minimum DC Current Gain (hFE):

10

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BUD42DT4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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