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BUD44D2-1

Onsemi

BUD44D2-1 by Onsemi

BUD44D2-1 by Onsemi is a NPN Power BJT with 400V VCE, 2A IC, and 13MHz fT. Ideal for switching applications, it features a single configuration with built-in diode in a plastic/epoxy package suitable for through-hole mounting.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,405 parts In-Stock

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Vyrian

USA . 1,397 parts In-Stock

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1,397

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Distributors (Availability)

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Native Components

USA . 243 parts In-Stock

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$0.194

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$0.187

243

$0.194

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$0.187

Northwest PG Solutions

USA . 2,203 parts In-Stock

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$0.214

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$0.189

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$0.214

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$0.189

TANS Electronics

Latvia . 8,008 parts In-Stock

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8,008

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Kulean Microsystems

USA . 6,866 parts In-Stock

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6,866

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SupplyDigital Components

Austria . 4,437 parts In-Stock

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4,437

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Problanco Electronics

Mexico . 2,751 parts In-Stock

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Corphita

USA . 952 parts In-Stock

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Corohmni

South Africa . 472 parts In-Stock

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UHIMA Technologies

Türkiye . 107 parts In-Stock

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Overview

Discover the power of the BUD44D2-1 by Onsemi, a high-quality Power Bipolar Junction Transistor designed for switching applications. With a maximum collector-emitter voltage of 400V and a built-in diode, this NPN transistor offers reliable performance and versatility. Onsemi's reputation for excellence ensures that you're getting a top-of-the-line product that meets your power needs. Whether you're looking to optimize your electronic circuits or enhance your power systems, the BUD44D2-1 delivers value, efficiency, and peace of mind. Upgrade your projects with this dependable transistor and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides excellent insulation properties and protects the transistor from external environmental factors, ensuring durability and long-term reliability.

Polarity or Channel Type: NPN

Commonly used in a wide range of applications, making it compatible with a variety of circuits.

Configuration: SINGLE WITH BUILT-IN DIODE

Offers added functionality with a built-in diode, saving space and reducing the need for additional components.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing efficient and reliable performance in such scenarios.

Package Shape: RECTANGULAR

Allows for easy mounting and integration into electronic circuits, saving on space and facilitating efficient PCB design.

Terminal Form: THROUGH-HOLE

Enables easy soldering and secure connection to the circuit board, ensuring stable operation and ease of assembly.

No. of Terminals: 3

Simplifies the circuit design and connections, making it suitable for a wide range of applications.

Package Style (Meter): IN-LINE

Provides a compact and space-saving form factor, ideal for applications where size constraints are a consideration.

Minimum DC Current Gain (hFE): 8

Allows for sufficient amplification of the input signal, ensuring proper transistor operation in the circuit.

Maximum Collector-Emitter Voltage: 400 V

Handles high voltage requirements, making it suitable for applications where voltage levels are critical.

Transistor Element Material: SILICON

Offers high efficiency and performance characteristics, ensuring reliable operation over extended periods.

Maximum Collector Current (IC): 2 A

Capable of handling high current loads, making it suitable for switching high-power devices in various applications.

Terminal Position: SINGLE

Simplifies the circuit layout and connection scheme, making it easier to integrate into electronic designs.

Case Connection: COLLECTOR

Allows for efficient heat dissipation and current flow, ensuring stable operation under high load conditions.

Nominal Transition Frequency (fT): 13 MHz

Provides high frequency response, making it suitable for applications requiring fast switching speeds and signal processing.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUD44D2-1 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN EFFICIENT ANTISATURATION NETWORK

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

400 V

Minimum DC Current Gain (hFE):

8

JESD-30 Code:

R-PSIP-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUD44D2-1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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