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BUD43BT4

Onsemi

BUD43BT4 by Onsemi

BUD43BT4 by Onsemi is a NPN Power BJT with max. VCE of 350V and IC of 2A. With hFE of 6 and fT of 13MHz, it's ideal for switching applications in small outline packages. This transistor features Gull Wing terminals, operates up to 150 °C, and uses silicon as the element material.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 938 parts In-Stock

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Digiode

USA . 361 parts In-Stock

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361

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Distributors (Availability)

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Native Components

USA . 665 parts In-Stock

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$296.940

100+ parts

$291.001

1k+ parts

$288.032

10k+ parts

$285.062

665

$296.940

$291.001

$288.032

$285.062

Northwest PG Solutions

USA . 163 parts In-Stock

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$326.634

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TANS Electronics

Latvia . 6,194 parts In-Stock

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Kulean Microsystems

USA . 5,446 parts In-Stock

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SupplyDigital Components

Austria . 5,197 parts In-Stock

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Problanco Electronics

Mexico . 4,785 parts In-Stock

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UHIMA Technologies

Türkiye . 865 parts In-Stock

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865

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Corphita

USA . 556 parts In-Stock

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Corohmni

South Africa . 127 parts In-Stock

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Overview

Unleash the power of innovation with the BUD43BT4 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors designed for a wide range of applications. With its NPN polarity and single configuration, this transistor is perfect for switching tasks. Its small outline package and gull wing terminals make it easy to install, while its high DC current gain and maximum operating temperature of 150 °C ensure optimal performance. Trust Onsemi to provide reliable solutions for your electronic needs, and experience the value and benefits that the BUD43BT4 brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and insulation, making the transistor suitable for various environments and applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering high performance and versatility.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity, making it easier to integrate into electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast and efficient operation in control circuits.

Surface Mount: YES

Surface mount capability allows for easy and secure placement on circuit boards, saving space and improving reliability.

Package Shape: RECTANGULAR

Rectangular shape provides a standard form factor for easy integration and mounting in electronic devices.

Terminal Form: GULL WING

Gull wing terminals offer secure solder connections and easy mounting, ensuring good electrical and mechanical performance.

No. of Terminals: 2

Having 2 terminals simplifies circuit connection and reduces the chances of wiring errors.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on a circuit board, making it suitable for compact electronic devices.

Minimum DC Current Gain (hFE): 6

A minimum DC current gain of 6 ensures reliable and consistent amplification performance in various operating conditions.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this transistor can withstand elevated temperatures without compromising performance.

Maximum Collector-Emitter Voltage: 350 V

High collector-emitter voltage rating of 350V allows for use in applications with higher voltage requirements.

Transistor Element Material: SILICON

Silicon material offers high performance, reliability, and efficiency, making it a popular choice for transistor construction.

Maximum Collector Current (IC): 2 A

With a high collector current rating of 2A, this transistor can handle large amounts of current in switching applications.

Terminal Finish: TIN LEAD

Tin-lead terminal finish provides excellent solderability and conductivity for reliable electrical connections.

Terminal Position: SINGLE

Single terminal position simplifies circuit design and installation, ensuring proper connectivity and operation.

Case Connection: COLLECTOR

Collector case connection allows for efficient dissipation of heat generated during operation, maintaining transistor performance and reliability.

Nominal Transition Frequency (fT): 13 MHz

With a nominal transition frequency of 13MHz, this transistor offers fast switching speeds and high-frequency operation for optimal performance in various applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUD43BT4 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

350 V

Configuration:

Minimum DC Current Gain (hFE):

6

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUD43BT4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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