Loading...

BUD43B-1

Onsemi

BUD43B-1 by Onsemi

BUD43B-1 by Onsemi is a NPN Power BJT with max. IC of 2A and VCE of 350V. It has hFE of min. 6 and fT of 13MHz, ideal for switching applications in electronics due to its single configuration and through-hole terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,164 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,164

-

-

-

-

Vyrian

USA . 807 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

807

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TANS Electronics

Latvia . 8,263 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,263

-

-

-

-

SupplyDigital Components

Austria . 6,463 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,463

-

-

-

-

Problanco Electronics

Mexico . 2,739 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,739

-

-

-

-

Northwest PG Solutions

USA . 1,884 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,884

-

-

-

-

Kulean Microsystems

USA . 819 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

819

-

-

-

-

UHIMA Technologies

Türkiye . 630 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

630

-

-

-

-

Native Components

USA . 324 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

324

-

-

-

-

Corohmni

South Africa . 293 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

293

-

-

-

-

Corphita

USA . 265 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

265

-

-

-

-

Overview

Unlock the power of efficient switching with the BUD43B-1 by Onsemi. Manufactured by the trusted brand Onsemi, this Power Bipolar Junction Transistor (BJT) offers reliability and performance like no other. Ideal for a wide range of applications, from automotive to industrial, this NPN transistor boasts a maximum Collector-Emitter Voltage of 350V and a Maximum Collector Current of 2A. With a minimum DC Current Gain of 6 and a Nominal Transition Frequency of 13MHz, the BUD43B-1 provides unparalleled value and benefits to customers seeking top-notch performance in their electronic devices.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

The NPN polarity ensures easy integration with other components in circuits, offering flexibility in design.

Configuration: SINGLE

The single configuration simplifies circuit design and installation, making the transistor easy to use for various projects.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers high performance and efficiency in controlling electrical signals.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient placement and mounting of the transistor on a circuit board.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides secure and stable connections, ensuring reliable performance in electronic circuits.

No. of Terminals: 3

With three terminals, this transistor is easy to interface with other components, enabling versatile applications in electronic projects.

Maximum Collector-Emitter Voltage: 350 V

The high maximum collector-emitter voltage allows the transistor to handle higher voltage levels, making it suitable for a wide range of applications.

Maximum Collector Current (IC): 2 A

With a maximum collector current of 2 A, this transistor can handle higher currents, making it ideal for switching and power control applications.

Nominal Transition Frequency (fT): 13 MHz

The high nominal transition frequency of 13 MHz ensures fast switching speeds and high-frequency performance, making the transistor suitable for high-speed applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUD43B-1 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

350 V

Configuration:

Minimum DC Current Gain (hFE):

6

JESD-30 Code:

R-PSIP-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUD43B-1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 18