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BD179G

Onsemi

BD179G by Onsemi

The Onsemi BD179G is a NPN BJT transistor with 3 terminals, capable of handling up to 30W power dissipation. With a max collector-emitter voltage of 80V and max current of 3A, it's ideal for amplifier applications. Operating at temperatures up to 150 °C, this silicon-based transistor has a transition frequency of 3MHz.

Median Price

$0.373

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 16 parts In-Stock

1+ parts

$0.164

100+ parts

$0.164

1k+ parts

$0.164

10k+ parts

$0.164

16

$0.164

$0.164

$0.164

$0.164

Rochester

USA . 14,169 parts In-Stock

1+ parts

$0.280

100+ parts

$0.270

1k+ parts

$0.270

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-

14,169

$0.280

$0.270

$0.270

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Farnell

UK . 977 parts In-Stock

1+ parts

$0.466

100+ parts

$0.236

1k+ parts

$0.182

10k+ parts

$0.156

977

$0.466

$0.236

$0.182

$0.156

Element14

Singapore . 977 parts In-Stock

1+ parts

$0.922

100+ parts

$0.466

1k+ parts

$0.360

10k+ parts

$0.286

977

$0.922

$0.466

$0.360

$0.286

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,609 parts In-Stock

1+ parts

$0.280

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-

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1,609

$0.280

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Vyrian

USA . 6,022 parts In-Stock

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-

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6,022

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Flip Electronics

USA . 2,500 parts In-Stock

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2,500

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ComSIT USA

USA . 990 parts In-Stock

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990

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ComSIT Distribution GmbH

Germany . 490 parts In-Stock

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490

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,486 parts In-Stock

1+ parts

$0.265

100+ parts

-

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-

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1,486

$0.265

-

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Corohmni

South Africa . 331 parts In-Stock

1+ parts

$0.295

100+ parts

-

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-

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331

$0.295

-

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Native Components

USA . 50 parts In-Stock

1+ parts

$0.355

100+ parts

-

1k+ parts

-

10k+ parts

$0.341

50

$0.355

-

-

$0.341

Northwest PG Solutions

USA . 1,994 parts In-Stock

1+ parts

$0.390

100+ parts

-

1k+ parts

-

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$0.344

1,994

$0.390

-

-

$0.344

AZTECH Wire

Italy . 160 parts In-Stock

1+ parts

$10.140

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160

$10.140

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Perfect Parts

USA . 28,165 parts In-Stock

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28,165

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Kepictronics

USA . 15,000 parts In-Stock

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15,000

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SupplyDigital Components

Austria . 7,581 parts In-Stock

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7,581

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TANS Electronics

Latvia . 7,432 parts In-Stock

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7,432

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A-Z Elektronik GmbH

Germany . 6,411 parts In-Stock

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6,411

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Kulean Microsystems

USA . 4,498 parts In-Stock

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4,498

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Alle Elektronik GmbH

Germany . 4,274 parts In-Stock

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4,274

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Continental Prestige Electronics

USA . 2,484 parts In-Stock

1+ parts

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$0.664

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2,484

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$0.664

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Problanco Electronics

Mexico . 2,202 parts In-Stock

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2,202

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UHIMA Technologies

Türkiye . 929 parts In-Stock

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929

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Robosynatics

Brazil . 150 parts In-Stock

1+ parts

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$1.428

1k+ parts

$1.322

10k+ parts

$1.322

150

-

$1.428

$1.322

$1.322

Lucentia Tech

USA . 150 parts In-Stock

1+ parts

-

100+ parts

$1.428

1k+ parts

$1.322

10k+ parts

$1.322

150

-

$1.428

$1.322

$1.322

Assy Fe

Spain . 90 parts In-Stock

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90

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Overview

Power up your projects with the BD179G from Onsemi! As a leading manufacturer in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors for all your amplifier needs. With a maximum power dissipation of 30W and a maximum collector-emitter voltage of 80V, this NPN transistor offers reliability and efficiency in a compact rectangular package. Whether you're working on audio amplifiers or electronic circuits, the BD179G provides the performance and durability you need to bring your designs to life. Experience the value and benefits of Onsemi's superior technology - power your projects with the BD179G today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

The single configuration simplifies the design and integration of the transistor into electronic circuits.

Maximum Power Dissipation (Abs): 30 W

With a maximum power dissipation of 30 W, this transistor can handle higher power levels, making it suitable for applications that require high power output.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows the transistor to operate reliably in elevated temperature environments.

Maximum Collector-Emitter Voltage: 80 V

The high maximum collector-emitter voltage of 80 V makes this transistor suitable for applications that require higher voltage levels.

Minimum DC Current Gain (hFE): 15

The minimum DC current gain of 15 ensures a consistent and reliable amplification performance.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor delivers high amplification performance.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and integration into electronic circuits.

No. of Terminals: 3

With 3 terminals, this transistor can be easily connected in electronic circuits for amplification purposes.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides easy installation and maintenance for the transistor.

Maximum Collector Current (IC): 3 A

With a maximum collector current of 3 A, this transistor can handle higher current levels, making it suitable for power applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good conductivity and corrosion resistance, ensuring reliable performance.

Nominal Transition Frequency (fT): 3 MHz

The nominal transition frequency of 3 MHz indicates the maximum frequency at which the transistor can operate effectively, making it suitable for high-frequency applications.

Terminal Position: SINGLE

The single terminal position simplifies the connection of the transistor in electronic circuits.

Transistor Element Material: SILICON

Silicon-based transistors offer high reliability and performance, making this transistor a durable and efficient choice for amplifier applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD179G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD179G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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