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BD17516

Onsemi

BD17516 by Onsemi

The Onsemi BD17516 is a NPN BJT transistor with max. collector-emitter voltage of 45V and max. collector current of 3A. With a min DC current gain of 100 and nominal transition frequency of 3MHz, it's ideal for switching applications in electronics due to its single configuration and through-hole terminal form.

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Digiode

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ECAB

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Corel Iberica Componentes, S.L.

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Fibra_Brandt Electronic GMBH

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ACDS - Activité Composants Distribution Service

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Holdelec - ElecDif-Pro

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Native Components

USA . 427 parts In-Stock

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Northwest PG Solutions

USA . 1,987 parts In-Stock

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TANS Electronics

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Problanco Electronics

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SupplyDigital Components

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Corphita

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UHIMA Technologies

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Corohmni

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Kulean Microsystems

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Overview

Upgrade your power management systems with the reliable BD17516 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and performance in their Power Bipolar Junction Transistors (BJT). Ideal for switching applications, this NPN transistor offers a maximum collector-emitter voltage of 45V and a collector current of 3A. With a minimum DC current gain of 100, this transistor ensures efficient power handling while maintaining stability. Trust Onsemi's BD17516 to provide the durability and precision your projects demand.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy packaging provides durability and protection for the transistor, making it reliable for long-term use.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications and are known for their high efficiency and fast switching speeds.

Configuration: SINGLE

Single configuration simplifies the circuit design and reduces the overall complexity of the system.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Package Shape: RECTANGULAR

Rectangular package shape allows for easier mounting and integration into various electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong and reliable connections, making it easy to solder the transistor onto a circuit board.

No. of Terminals: 3

3 terminals provide the necessary connections for the transistor to function effectively within a circuit.

Package Style (Meter): FLANGE MOUNT

Flange mount package style allows for secure and stable mounting of the transistor in a system.

Minimum DC Current Gain (hFE): 100

High DC current gain ensures efficient amplification of current within the circuit.

Maximum Collector-Emitter Voltage: 45 V

The high collector-emitter voltage rating allows for the transistor to handle high voltage applications without getting damaged.

Transistor Element Material: SILICON

Silicon material provides high performance and reliability for the transistor, making it suitable for a wide range of applications.

Maximum Collector Current (IC): 3 A

The high collector current rating makes the transistor suitable for handling high current loads in a circuit.

Terminal Position: SINGLE

Single terminal position simplifies the connections required for the transistor within a circuit.

Nominal Transition Frequency (fT): 3 MHz

High nominal transition frequency ensures fast response times and efficient switching characteristics of the transistor.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD17516 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD17516 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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