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BD178-16

Onsemi

BD178-16 by Onsemi

The Onsemi BD178-16 is a PNP BJT transistor with max VCEsat of 0.8V and max IC of 3A, ideal for switching applications. With a min hFE of 100 and fT of 3MHz, it offers high performance in a plastic/epoxy package suitable for flange mount installations. Operating up to 150 °C, it's designed for power dissipation up to 30W in various electronic circuits.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 1,691 parts In-Stock

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Digiode

USA . 891 parts In-Stock

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Native Components

USA . 382 parts In-Stock

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$43.380

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$41.645

382

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$41.645

Northwest PG Solutions

USA . 3,751 parts In-Stock

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$47.718

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SupplyDigital Components

Austria . 5,618 parts In-Stock

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TANS Electronics

Latvia . 4,963 parts In-Stock

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Corphita

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Supply Digital

USA . 984 parts In-Stock

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UHIMA Technologies

Türkiye . 714 parts In-Stock

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Corohmni

South Africa . 259 parts In-Stock

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Problanco Electronics

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Kulean Microsystems

USA . 14 parts In-Stock

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Overview

Discover the power of the Onsemi BD178-16, a top-tier Power Bipolar Junction Transistor renowned for its superior quality and reliable performance. Designed for switching applications, this PNP transistor offers a maximum VCEsat of 0.8V and a maximum collector current of 3A, ensuring optimal efficiency and functionality. Whether you're looking to enhance your electronic projects or upgrade your industrial equipment, the BD178-16 is the ideal choice with its 30W maximum power dissipation and impressive minimum DC current gain of 100. Trust Onsemi to deliver cutting-edge technology and unmatched value with the BD178-16.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good insulation and protection for the transistor, ensuring durability and longevity.

Polarity or Channel Type: PNP

PNP configuration allows for easy integration into circuits that require PNP transistors, making it versatile for various applications.

Configuration: SINGLE

SINGLE configuration simplifies circuit design and connection, making it easy to use in different electronic projects.

Transistor Application: SWITCHING

SWITCHING application indicates that the transistor is designed for efficient and reliable switching operations, suitable for use in power control circuits.

Maximum VCEsat: 0.8 V

Low VCEsat of 0.8 V ensures minimal power loss during operation, making the transistor energy-efficient.

Package Shape: RECTANGULAR

RECTANGULAR shape allows for easy placement and mounting on circuit boards, facilitating installation and connectivity.

Terminal Form: THROUGH-HOLE

THROUGH-HOLE terminals provide secure and reliable connections, making it suitable for through-hole PCB assembly processes.

Maximum Power Dissipation (Abs): 30 W

High maximum power dissipation of 30 W indicates the transistor's capability to handle high power levels without overheating or damage.

Package Style (Meter): FLANGE MOUNT

FLANGE MOUNT package style allows for easy mounting on heat sinks or other components, enhancing heat dissipation and overall performance.

Minimum DC Current Gain (hFE): 100

Minimum DC Current Gain of 100 ensures reliable amplification of current in the circuit, enabling efficient signal processing.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150 °C allows the transistor to perform reliably in a wide range of temperature conditions, ensuring stability and longevity.

Maximum Collector-Emitter Voltage: 60 V

Maximum Collector-Emitter Voltage of 60 V indicates the transistor's capability to withstand high voltage operation, making it suitable for high voltage applications.

Transistor Element Material: SILICON

SILICON material in the transistor element provides good thermal and electrical properties, ensuring reliable performance and longevity.

Maximum Collector Current (IC): 3 A

Maximum Collector Current of 3 A indicates the transistor's capability to carry high current loads, making it suitable for power applications.

Terminal Position: SINGLE

SINGLE terminal position simplifies circuit connections and layout, making it easy to integrate into various electronic projects.

Nominal Transition Frequency (fT): 3 MHz

Nominal Transition Frequency of 3 MHz indicates the transistor's capability to switch at high frequencies, enabling fast and efficient operation in high-speed circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD178-16 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.8 V

Trade Compliance

BD178-16 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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