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BD176-10

Onsemi

BD176-10 by Onsemi

The Onsemi BD176-10 is a PNP BJT transistor with max VCEsat of 0.8V, IC of 3A, and hFE of 63. Ideal for switching applications due to its high power dissipation of 30W and max operating temp of 150 °C in a rectangular package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,273 parts In-Stock

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Digiode

USA . 970 parts In-Stock

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970

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Native Components

USA . 1,496 parts In-Stock

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$76.305

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$73.253

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$73.253

Northwest PG Solutions

USA . 2,850 parts In-Stock

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$83.936

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Problanco Electronics

Mexico . 5,618 parts In-Stock

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TANS Electronics

Latvia . 4,292 parts In-Stock

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Corphita

USA . 1,015 parts In-Stock

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Kulean Microsystems

USA . 886 parts In-Stock

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SupplyDigital Components

Austria . 599 parts In-Stock

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UHIMA Technologies

Türkiye . 543 parts In-Stock

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Supply Digital

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Corohmni

South Africa . 122 parts In-Stock

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Overview

Unlock the power of innovation with the BD176-10 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors for a variety of applications. The BD176-10 offers unparalleled value with its high performance and reliability, making it the ideal choice for switching applications. Experience the benefits of this PNP transistor, from its low VCEsat to its high DC current gain. Trust Onsemi to provide cutting-edge technology that meets your needs and exceeds your expectations. Elevate your projects with the BD176-10 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, allowing it to withstand various environmental conditions.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-power applications and are suitable for switching purposes.

Configuration: SINGLE

A single configuration simplifies the design and makes it easier to integrate the transistor into a circuit.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable and efficient performance.

Maximum VCEsat: 0.8 V

Low VCE saturation voltage helps reduce power consumption and heat dissipation, making the transistor energy-efficient.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure connection and ease of soldering during assembly.

Maximum Power Dissipation (Abs): 30 W

With a high power dissipation capacity, this transistor can handle high power loads without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package style allows for easy mounting and heat dissipation, enhancing the overall performance of the transistor.

Minimum DC Current Gain (hFE): 63

A high DC current gain ensures amplification of the input signal with minimal distortion.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can operate reliably in a wide range of temperature environments.

Maximum Collector-Emitter Voltage: 45 V

A high collector-emitter voltage rating offers protection against voltage spikes and ensures the transistor's durability.

Transistor Element Material: SILICON

Silicon transistors are known for their reliability, stability, and low leakage current, making them ideal for various applications.

Maximum Collector Current (IC): 3 A

With a high collector current rating, this transistor is capable of handling high current loads without compromising performance.

Terminal Position: SINGLE

A single terminal position simplifies the installation process and ensures a secure connection.

Nominal Transition Frequency (fT): 3 MHz

A high transition frequency enables fast switching speeds, making this transistor suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD176-10 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

63

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.8 V

Trade Compliance

BD176-10 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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