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BD178-6

Onsemi

BD178-6 by Onsemi

The Onsemi BD178-6 is a PNP BJT transistor with max VCEsat of 0.8V and max IC of 3A, ideal for switching applications. With a min hFE of 40 and fT of 3MHz, it offers high performance in a plastic/epoxy package suitable for flange mount installations. Operating up to 150 °C, it's designed for power dissipation up to 30W in various electronic circuits.

Median Price

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Lifecycle Status

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4

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1k+

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Digiode

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Vyrian

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ComSIT Distribution GmbH

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ComSIT USA

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Native Components

USA . 991 parts In-Stock

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$76.926

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$76.926

Northwest PG Solutions

USA . 2,728 parts In-Stock

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SupplyDigital Components

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Problanco Electronics

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TANS Electronics

Latvia . 3,394 parts In-Stock

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Kulean Microsystems

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Corphita

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Corohmni

South Africa . 490 parts In-Stock

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Supply Digital

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UHIMA Technologies

Türkiye . 244 parts In-Stock

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Overview

Unleash the power of reliable performance with the BD178-6 by Onsemi. Crafted with precision and quality, this Power Bipolar Junction Transistor is designed for applications requiring efficient switching capabilities. With a maximum VCEsat of 0.8V and a minimum DC current gain of 40, this PNP transistor offers exceptional value for customers seeking high-quality components. Whether you're looking to optimize power dissipation or enhance operational temperature limits, the BD178-6 delivers unparalleled benefits that promise unmatched performance in every application. Trust Onsemi to provide cutting-edge solutions that exceed expectations and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and helps in protecting the transistor from external elements, making it suitable for various applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into circuits and can be used in complementary transistor pairs for efficient switching applications.

Configuration: SINGLE

The single configuration simplifies the design process and makes it easier to integrate the transistor into circuits.

Maximum VCEsat: 0.8 V

The low VCEsat value indicates minimal power loss during operation, resulting in higher efficiency and lower heat dissipation.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and placement within circuit boards, ensuring a compact and space-efficient design.

Terminal Form: THROUGH-HOLE

The through-hole terminals provide a secure and reliable connection, making it easier to solder and integrate the transistor into circuit boards.

Maximum Power Dissipation (Abs): 30 W

The high power dissipation capability allows the transistor to handle large loads without the risk of overheating or failure.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers easy mounting and allows for efficient heat dissipation, ensuring reliable performance under high power conditions.

Minimum DC Current Gain (hFE): 40

The high DC current gain ensures accurate and consistent switching performance, making the transistor suitable for a wide range of applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the transistor to withstand harsh environmental conditions and ensures reliable performance in various applications.

Maximum Collector-Emitter Voltage: 60 V

The high collector-emitter voltage rating provides a wide voltage tolerance range and allows the transistor to handle higher voltage applications without the risk of damage.

Transistor Element Material: SILICON

The silicon material ensures high performance and reliability, making the transistor suitable for demanding applications where stability is essential.

Maximum Collector Current (IC): 3 A

The high collector current rating allows the transistor to handle large current loads, making it suitable for high-power switching applications.

Terminal Position: SINGLE

The single terminal position simplifies the circuit design and makes it easier to integrate the transistor into various electronic systems.

Nominal Transition Frequency (fT): 3 MHz

The high nominal transition frequency indicates fast switching speeds, making the transistor ideal for applications where quick response times are crucial.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD178-6 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.8 V

Trade Compliance

BD178-6 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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