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BD176-6

Onsemi

BD176-6 by Onsemi

The Onsemi BD176-6 is a PNP BJT transistor with max VCEsat of 0.8V, IC of 3A, and hFE of 40. Ideal for switching applications due to its high power dissipation of 30W and operating temp up to 150 °C. Its through-hole package makes it suitable for various electronic designs requiring reliable performance.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,691 parts In-Stock

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Vyrian

USA . 1,056 parts In-Stock

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Native Components

USA . 537 parts In-Stock

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$60.966

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$58.527

537

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$58.527

Northwest PG Solutions

USA . 4,390 parts In-Stock

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$102.300

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Kulean Microsystems

USA . 8,157 parts In-Stock

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Problanco Electronics

Mexico . 4,743 parts In-Stock

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SupplyDigital Components

Austria . 3,829 parts In-Stock

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TANS Electronics

Latvia . 3,117 parts In-Stock

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Supply Digital

USA . 2,120 parts In-Stock

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Corphita

USA . 1,379 parts In-Stock

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UHIMA Technologies

Türkiye . 271 parts In-Stock

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Corohmni

South Africa . 114 parts In-Stock

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Overview

Enhance your electronics projects with the high-quality BD176-6 Power Bipolar Junction Transistor by Onsemi. Manufactured by a trusted industry leader, this PNP transistor is perfect for switching applications, offering a maximum VCEsat of 0.8V and a maximum collector current of 3A. With a minimum DC current gain of 40 and a nominal transition frequency of 3 MHz, this transistor provides reliable performance in a range of scenarios. Upgrade your designs today with the BD176-6 and experience the value and benefits it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: PNP

Suitable for many applications including switching circuits and amplifiers.

Configuration: SINGLE

Simplified circuit design with only one transistor in the package.

Transistor Application: SWITCHING

Optimized for efficient switching operations.

Maximum VCEsat: 0.8V

Low VCEsat results in minimal power loss and high efficiency in switching applications.

Package Shape: RECTANGULAR

Easy to mount or solder onto a circuit board.

Terminal Form: THROUGH-HOLE

Simplifies the process of connecting the transistor to a circuit.

Maximum Power Dissipation (Abs): 30W

Can handle high power dissipation, suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

Provides a secure mounting option for the transistor.

Minimum DC Current Gain (hFE): 40

Ensures sufficient current gain for reliable operation.

Maximum Operating Temperature: 150 °C

Capable of operating in high-temperature environments.

Maximum Collector-Emitter Voltage: 45V

Can withstand relatively high voltages in the circuit.

Transistor Element Material: SILICON

Silicon transistors offer good performance and reliability.

Maximum Collector Current (IC): 3A

Capable of handling high current loads.

Terminal Position: SINGLE

Simplified connection for ease of use.

Nominal Transition Frequency (fT): 3MHz

Allows for high-speed switching operations.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD176-6 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.8 V

Trade Compliance

BD176-6 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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