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BD17710

Onsemi

BD17710 by Onsemi

The Onsemi BD17710 is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a hFE of 63 and can handle up to 3A of collector current at 60V. With a transition frequency of 3MHz, it is commonly used in flange mount configurations for power control systems.

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2

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1k+

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Digiode

USA . 1,681 parts In-Stock

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Vyrian

USA . 696 parts In-Stock

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Native Components

USA . 1,926 parts In-Stock

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$63.082

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Northwest PG Solutions

USA . 4,038 parts In-Stock

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TANS Electronics

Latvia . 4,573 parts In-Stock

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Kulean Microsystems

USA . 3,270 parts In-Stock

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SupplyDigital Components

Austria . 2,405 parts In-Stock

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Corphita

USA . 1,751 parts In-Stock

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Problanco Electronics

Mexico . 1,742 parts In-Stock

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Supply Digital

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UHIMA Technologies

Türkiye . 826 parts In-Stock

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Corohmni

South Africa . 283 parts In-Stock

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Overview

Unlock the power of innovation with the BD17710 by Onsemi, a high-quality Power BJT transistor designed for switching applications. Manufactured by Onsemi, a renowned leader in semiconductor technology, this NPN transistor offers unmatched reliability and performance. Ideal for a wide range of applications, this single configuration transistor delivers superior functionality and efficiency. Experience the value and benefits of the BD17710, providing customers with the competitive edge they need to succeed in today's rapidly evolving market. Elevate your projects with the BD17710 and discover the difference that quality and excellence can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, making it suitable for a wide range of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications, making this transistor versatile and compatible with many circuit designs.

Configuration: SINGLE

Single configuration transistors are easier to integrate into circuit designs, simplifying the overall layout and reducing potential points of failure.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers reliable performance in rapidly changing circuit conditions.

Package Shape: RECTANGULAR

Rectangular packages are easy to handle and mount, making this transistor convenient for assembly and maintenance.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections, ensuring secure placement and reducing the risk of solder joint failure.

No. of Terminals: 3

With three terminals, this transistor allows for easy connection in common circuit configurations, providing flexibility in circuit design.

Package Style (Meter): FLANGE MOUNT

Flange mount packages offer stability and heat dissipation, making this transistor suitable for high-power applications.

Minimum DC Current Gain (hFE): 63

A minimum DC current gain of 63 ensures consistent and reliable amplification in a wide range of operating conditions.

Maximum Collector-Emitter Voltage: 60 V

With a high collector-emitter voltage rating of 60 V, this transistor can handle higher voltages, providing versatility in circuit design.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making this transistor a durable choice for a variety of applications.

Maximum Collector Current (IC): 3 A

A maximum collector current of 3 A allows this transistor to handle higher current loads, making it suitable for power applications.

Terminal Position: SINGLE

Single terminal position simplifies circuit design and integration, reducing the risk of errors during assembly.

Nominal Transition Frequency (fT): 3 MHz

With a nominal transition frequency of 3 MHz, this transistor can operate at high speeds, making it ideal for switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD17710 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

63

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD17710 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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