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BD17910

Onsemi

BD17910 by Onsemi

The Onsemi BD17910 is a NPN BJT transistor with 3 terminals, capable of handling up to 30W power dissipation. With a max collector current of 3A and operating temp of 200 °C, it's ideal for switching applications. Its silicon element material and flange mount package make it suitable for high-power electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,542 parts In-Stock

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Digiode

USA . 1,501 parts In-Stock

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Native Components

USA . 625 parts In-Stock

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$0.262

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$0.252

625

$0.262

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$0.252

Northwest PG Solutions

USA . 2,001 parts In-Stock

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$37.638

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Problanco Electronics

Mexico . 7,740 parts In-Stock

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TANS Electronics

Latvia . 6,116 parts In-Stock

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Kulean Microsystems

USA . 5,392 parts In-Stock

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SupplyDigital Components

Austria . 3,681 parts In-Stock

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Corphita

USA . 2,352 parts In-Stock

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Supply Digital

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Corohmni

South Africa . 475 parts In-Stock

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UHIMA Technologies

Türkiye . 356 parts In-Stock

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Overview

Looking to power up your next project? The BD17910 by Onsemi is a top-quality Power Bipolar Junction Transistor that delivers superior performance and reliability. Manufactured by industry leader Onsemi, this NPN transistor is perfect for switching applications and offers a maximum collector current of 3A. With a maximum operating temperature of 200 °C and a flange mount package style, the BD17910 is designed to handle even the toughest tasks with ease. Trust in Onsemi to provide you with the best components for your projects. Upgrade to the BD17910 today and experience the difference in quality and performance!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and reliability, making this transistor suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications and offer good amplification capabilities.

Configuration: SINGLE

Single configuration simplifies the circuit design and makes it easier to integrate into different systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in controlling power flow.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement on circuit boards and efficient use of space.

No. of Terminals: 3

Having 3 terminals allows for proper connection within the circuit and facilitates functionality.

Maximum Power Dissipation (Abs): 30 W

With a maximum power dissipation of 30W, this transistor can handle high power applications effectively.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers secure mounting and reduces the risk of damage during installation or operation.

Minimum DC Current Gain (hFE): 63

A minimum DC current gain of 63 ensures stable and reliable amplification of current through the transistor.

Maximum Operating Temperature: 200 °C

With a maximum operating temperature of 200 °C, this transistor can withstand high temperatures, suitable for various environments.

Maximum Collector-Emitter Voltage: 80 V

With a maximum collector-emitter voltage of 80V, this transistor can handle higher voltage levels efficiently.

Transistor Element Material: SILICON

Silicon material provides good performance and reliability in electronic devices.

Maximum Collector Current (IC): 3 A

Capable of handling a maximum collector current of 3A, making it suitable for medium-power applications.

Terminal Finish: TIN LEAD

Tin lead terminal finish offers good conductivity and solderability, ensuring reliable connections.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection within the circuit.

Nominal Transition Frequency (fT): 3 MHz

With a nominal transition frequency of 3MHz, this transistor offers good high-frequency response for switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD17910 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

63

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD17910 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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