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BD178-10

Onsemi

BD178-10 by Onsemi

The Onsemi BD178-10 is a PNP BJT transistor for switching applications. It has a max VCEsat of 0.8V, can handle up to 3A collector current, and operates at temperatures up to 150 °C. Ideal for power control circuits in various electronic devices.

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1k+

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Digiode

USA . 2,689 parts In-Stock

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Vyrian

USA . 1,716 parts In-Stock

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Native Components

USA . 1,610 parts In-Stock

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$30.970

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$29.731

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$29.731

Northwest PG Solutions

USA . 1,985 parts In-Stock

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$34.067

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SupplyDigital Components

Austria . 6,537 parts In-Stock

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Problanco Electronics

Mexico . 4,539 parts In-Stock

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Kulean Microsystems

USA . 2,521 parts In-Stock

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Corphita

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Supply Digital

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Corohmni

South Africa . 467 parts In-Stock

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TANS Electronics

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UHIMA Technologies

Türkiye . 136 parts In-Stock

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Overview

Discover the power of the BD178-10 by Onsemi, a top-quality Power Bipolar Junction Transistor that offers exceptional performance in switching applications. Manufactured by Onsemi, a trusted industry leader, this PNP transistor provides a maximum VCEsat of 0.8V and a maximum collector current of 3A, making it an ideal choice for high-power projects. With a flange mount package style and a nominal transition frequency of 3 MHz, the BD178-10 delivers reliability and efficiency in a compact design. Upgrade your electronics with the BD178-10 and experience the superior quality and value that Onsemi products offer.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and lightweight housing for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching applications, making this transistor versatile for different circuit designs.

Configuration: SINGLE

Simplifies circuit design and offers ease of integration into existing systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Maximum VCEsat: 0.8 V

Low collector-emitter saturation voltage helps minimize power loss and improve efficiency in switching operations.

Package Shape: RECTANGULAR

Facilitates easy mounting and placement on circuit boards or heat sinks.

No. of Terminals: 3

Standard number of terminals for basic transistor connections, making it compatible with common circuit layouts.

Maximum Power Dissipation (Abs): 30 W

Can handle relatively high power levels, suitable for medium to high-power applications.

Package Style (Meter): FLANGE MOUNT

Enables secure mounting on heat sinks or chassis for effective heat dissipation.

Minimum DC Current Gain (hFE): 63

Ensures sufficient current amplification in the transistor, essential for reliable switching performance.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for use in various environmental conditions without loss of performance.

Maximum Collector-Emitter Voltage: 60 V

Withstand high collector-emitter voltages, making it suitable for different voltage levels in the circuit.

Transistor Element Material: SILICON

Silicon-based construction ensures stable and consistent performance over a wide range of operating conditions.

Maximum Collector Current (IC): 3 A

Capable of handling moderate current levels, suitable for a wide range of switching applications.

Terminal Position: SINGLE

Single terminal position simplifies connection and ensures proper alignment in the circuit layout.

Nominal Transition Frequency (fT): 3 MHz

Higher transition frequency allows for faster switching speeds, crucial for applications requiring quick response times.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD178-10 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

63

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.8 V

Trade Compliance

BD178-10 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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