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BD17510

Onsemi

BD17510 by Onsemi

The Onsemi BD17510 is a NPN BJT transistor with 3A IC, 45V VCE, and 63 hFE. Ideal for switching applications, it features a silicon element in a plastic/epoxy package with flange mount style. The transistor operates at 3MHz fT in a single-terminal configuration.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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PC Components Company LLC

USA . 2,000 parts In-Stock

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2,000

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Vyrian

USA . 1,912 parts In-Stock

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Bristol Electronics

USA . 1,000 parts In-Stock

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Digiode

USA . 432 parts In-Stock

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432

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Andel Nordic

Denmark . 577 parts In-Stock

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$2.530

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$1.773

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$1.773

577

$2.530

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$1.773

$1.773

Native Components

USA . 1,987 parts In-Stock

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$78.800

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$75.648

1,987

$78.800

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$75.648

Northwest PG Solutions

USA . 1,427 parts In-Stock

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$86.680

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$86.680

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TANS Electronics

Latvia . 7,074 parts In-Stock

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7,074

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SupplyDigital Components

Austria . 6,222 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,924 parts In-Stock

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Problanco Electronics

Mexico . 4,722 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,949 parts In-Stock

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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Kulean Microsystems

USA . 2,090 parts In-Stock

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A-Plus Industry Inc.

USA . 1,000 parts In-Stock

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Corphita

USA . 996 parts In-Stock

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UHIMA Technologies

Türkiye . 563 parts In-Stock

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563

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Supply Digital

USA . 439 parts In-Stock

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439

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Corohmni

South Africa . 124 parts In-Stock

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124

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Overview

Unlock the power of innovation with the BD17510 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors for various applications. The BD17510 offers unmatched reliability and efficiency, making it the ideal choice for switching applications. Experience seamless performance and superior functionality with this NPN transistor. Upgrade your projects today and discover the difference with the BD17510 from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material is lightweight and durable, making the transistor easy to handle and less prone to damage during installation or use.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications due to their ability to amplify and control current flow effectively.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making the transistor suitable for various switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can efficiently control the flow of current in electronic circuits.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy mounting and installation in circuit boards, saving space and providing a neat layout.

Terminal Form: THROUGH-HOLE

The through-hole terminals make soldering the transistor onto a PCB easy and secure, ensuring reliable connections and stable performance.

No. of Terminals: 3

With three terminals, the transistor can be easily connected in a circuit, providing flexibility in design and allowing for various configurations.

Package Style (Meter): FLANGE MOUNT

The flange mount style allows for secure and stable mounting of the transistor in a device or system, ensuring proper heat dissipation and mechanical support.

Minimum DC Current Gain (hFE): 63

The minimum DC current gain of 63 ensures reliable and consistent amplification of current, making the transistor suitable for a wide range of applications.

Maximum Collector-Emitter Voltage: 45 V

With a maximum collector-emitter voltage of 45 V, this transistor can handle high voltages without breakdown, ensuring reliable performance in demanding conditions.

Transistor Element Material: SILICON

Silicon is a common and reliable material for transistor elements, providing excellent electrical properties and high performance in various operating conditions.

Maximum Collector Current (IC): 3 A

The maximum collector current of 3 A allows the transistor to handle high current loads, making it suitable for power switching applications that require robust performance.

Terminal Position: SINGLE

The single terminal position simplifies circuit connections and layout, ensuring easy integration of the transistor in electronic systems.

Nominal Transition Frequency (fT): 3 MHz

The nominal transition frequency of 3 MHz indicates the maximum frequency at which the transistor can operate effectively, making it suitable for high-speed switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD17510 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

63

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD17510 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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