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BD17510STU

Onsemi

BD17510STU by Onsemi

BD17510STU by Onsemi is a NPN power BJT with 3A max collector current, 30W power dissipation, and 45V max collector-emitter voltage. Ideal for switching applications, it has a min hFE of 63 and operates up to 150°C. The transistor comes in a rectangular package with through-hole terminals.

Median Price

$0.534

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 830 parts In-Stock

1+ parts

$0.168

100+ parts

-

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830

$0.168

-

-

-

Mouser Electronics

USA . 50 parts In-Stock

1+ parts

$0.670

100+ parts

$0.432

1k+ parts

$0.333

10k+ parts

$0.286

50

$0.670

$0.432

$0.333

$0.286

Adafruit Industries

USA . 20 parts In-Stock

1+ parts

$0.889

100+ parts

$0.809

1k+ parts

$0.729

10k+ parts

-

20

$0.889

$0.809

$0.729

-

DigiKey

USA . 1,146 parts In-Stock

1+ parts

$1.280

100+ parts

$0.529

1k+ parts

$0.411

10k+ parts

-

1,146

$1.280

$0.529

$0.411

-

Rochester

USA . 32,697 parts In-Stock

1+ parts

-

100+ parts

$0.355

1k+ parts

$0.294

10k+ parts

$0.263

32,697

-

$0.355

$0.294

$0.263

Verical

USA . 24,960 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.399

10k+ parts

$0.328

24,960

-

-

$0.399

$0.328

Flip Electronics (Authorized)

USA . 7,680 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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7,680

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Chip1Stop

Japan . 850 parts In-Stock

1+ parts

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850

-

-

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-

Distributors (In-Stock)

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Digiode

USA . 1,192 parts In-Stock

1+ parts

$0.160

100+ parts

-

1k+ parts

-

10k+ parts

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1,192

$0.160

-

-

-

Vyrian

USA . 1,622 parts In-Stock

1+ parts

$0.168

100+ parts

-

1k+ parts

-

10k+ parts

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1,622

$0.168

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Flip Electronics

USA . 7,680 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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7,680

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,674 parts In-Stock

1+ parts

$0.151

100+ parts

-

1k+ parts

-

10k+ parts

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1,674

$0.151

-

-

-

Corohmni

South Africa . 384 parts In-Stock

1+ parts

$0.239

100+ parts

-

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-

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384

$0.239

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-

-

Advanced Electronics

New Zealand . 20 parts In-Stock

1+ parts

$0.889

100+ parts

$0.809

1k+ parts

$0.729

10k+ parts

-

20

$0.889

$0.809

$0.729

-

Microchip USA

USA . 2,304 parts In-Stock

1+ parts

$5.140

100+ parts

$5.100

1k+ parts

$5.090

10k+ parts

$5.070

2,304

$5.140

$5.100

$5.090

$5.070

Native Components

USA . 204 parts In-Stock

1+ parts

$44.710

100+ parts

-

1k+ parts

-

10k+ parts

$42.922

204

$44.710

-

-

$42.922

Northwest PG Solutions

USA . 1,662 parts In-Stock

1+ parts

$49.181

100+ parts

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1,662

$49.181

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QUARKTWIN TECHNOLOGY LTD

USA . 28,100 parts In-Stock

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28,100

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Perfect Parts

USA . 17,277 parts In-Stock

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17,277

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Problanco Electronics

Mexico . 5,249 parts In-Stock

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5,249

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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3,900

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Supply Digital

USA . 1,888 parts In-Stock

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1,888

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SupplyDigital Components

Austria . 780 parts In-Stock

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780

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TANS Electronics

Latvia . 645 parts In-Stock

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645

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Continental Prestige Electronics

USA . 553 parts In-Stock

1+ parts

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1k+ parts

$0.350

10k+ parts

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553

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-

$0.350

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UHIMA Technologies

Türkiye . 260 parts In-Stock

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260

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Kulean Microsystems

USA . 146 parts In-Stock

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146

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Overview

Unleash the power of innovation with the BD17510STU by Onsemi. This high-quality Power Bipolar Junction Transistor is designed for switching applications, offering a seamless single-channel configuration that ensures optimal performance. With a maximum collector-emitter voltage of 45V and a maximum operating temperature of 150°C, this transistor delivers reliability and efficiency in every use. Whether you're in need of a reliable component for industrial machinery or automotive systems, the BD17510STU provides the value and benefits you need to take your projects to the next level. Trust in Onsemi's expertise and elevate your designs with this versatile and dependable transistor.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, making the transistor easy to handle and install.

Polarity or Channel Type: NPN

Commonly used type of BJT which allows for easily interfacing with other components in circuits.

Configuration: SINGLE

Simplified design for straightforward circuit integration and usage.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Maximum Power Dissipation (Abs): 30 W

High power dissipation capability allows for handling of larger currents and voltages.

Maximum Collector-Emitter Voltage: 45 V

Suitable for circuits requiring up to 45 volts in collector-emitter voltage.

Transistor Element Material: SILICON

Silicon material offers good performance and efficiency for the transistor.

Maximum Collector Current (IC): 3 A

Capable of handling currents up to 3 amps, making it versatile for various applications.

Nominal Transition Frequency (fT): 3 MHz

High transition frequency allows for fast switching speeds in applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD17510STU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

63

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD17510STU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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