Loading...

BD1756

Onsemi

BD1756 by Onsemi

The Onsemi BD1756 is a NPN BJT transistor with max. 45V VCE, 3A IC, and min. hFE of 40. Ideal for switching applications due to its single configuration and 3MHz fT. Packaged in plastic/epoxy with flange mount style for through-hole terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,987 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,987

-

-

-

-

Digiode

USA . 1,206 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,206

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Northwest PG Solutions

USA . 1,439 parts In-Stock

1+ parts

$55.586

100+ parts

-

1k+ parts

-

10k+ parts

-

1,439

$55.586

-

-

-

Native Components

USA . 1,497 parts In-Stock

1+ parts

$170.589

100+ parts

-

1k+ parts

-

10k+ parts

$163.765

1,497

$170.589

-

-

$163.765

SupplyDigital Components

Austria . 5,274 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,274

-

-

-

-

Kulean Microsystems

USA . 4,624 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,624

-

-

-

-

Problanco Electronics

Mexico . 4,196 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,196

-

-

-

-

Corphita

USA . 2,657 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,657

-

-

-

-

Supply Digital

USA . 2,484 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,484

-

-

-

-

TANS Electronics

Latvia . 421 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

421

-

-

-

-

UHIMA Technologies

Türkiye . 346 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

346

-

-

-

-

Corohmni

South Africa . 87 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

87

-

-

-

-

Overview

Elevate your power switching capabilities with the BD1756 by Onsemi. Crafted with precision and quality, this Power Bipolar Junction Transistor offers unparalleled performance and reliability. Whether you're in need of a robust solution for industrial applications or looking to enhance your electronic designs, the BD1756 delivers on every front. With a maximum collector-emitter voltage of 45V and a maximum collector current of 3A, this NPN transistor is the perfect choice for your next project. Trust Onsemi to provide you with the tools you need to succeed.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering versatility in circuit design.

Configuration: SINGLE

Simplifies circuit design and ensures ease of use.

Transistor Application: SWITCHING

Designed specifically for switching applications, offering reliable performance in such scenarios.

Package Shape: RECTANGULAR

Facilitates easy mounting and integration into electronic circuits.

Terminal Form: THROUGH-HOLE

Enables easy soldering onto circuit boards, ensuring secure connections.

No. of Terminals: 3

Simplifies circuit connections and reduces complexity in circuit layout.

Package Style (Meter): FLANGE MOUNT

Allows for secure mounting onto surfaces, ensuring stability and reliability.

Minimum DC Current Gain (hFE): 40

Provides sufficient amplification capabilities for various circuit applications.

Maximum Collector-Emitter Voltage: 45 V

Offers a high voltage rating, suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance and reliability in electronic circuits.

Maximum Collector Current (IC): 3 A

Supports high current requirements in switching applications, ensuring efficient operation.

Terminal Position: SINGLE

Simplifies installation and circuit connection.

Nominal Transition Frequency (fT): 3 MHz

Provides fast switching speeds and high-frequency capabilities for dynamic circuit operation.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD1756 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD1756 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20