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2N6109G

Onsemi

2N6109G by Onsemi

2N6109G by Onsemi is a PNP power bipolar junction transistor (BJT) with a max collector-emitter voltage of 50V and a max collector current of 7A. It is commonly used for switching applications and has a min DC current gain of 30 (hFE).

Median Price

$0.520

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

Distributors (Authorized)

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Element14

Singapore . 7 parts In-Stock

1+ parts

$1.360

100+ parts

$0.722

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$0.578

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7

$1.360

$0.722

$0.578

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Adafruit Industries

USA . 20 parts In-Stock

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$1.369

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$1.246

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$1.123

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20

$1.369

$1.246

$1.123

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Rochester

USA . 11,828 parts In-Stock

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-

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$0.438

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$0.364

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$0.324

11,828

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$0.438

$0.364

$0.324

Verical

USA . 11,828 parts In-Stock

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$0.455

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$0.405

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Avnet

USA . 1,388 parts In-Stock

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Bürklin Elektronik

Germany . 520 parts In-Stock

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$0.520

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520

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$0.520

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Distributors (In-Stock)

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Digiode

USA . 2,359 parts In-Stock

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$0.410

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2,359

$0.410

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Nova Conductors

Japan . 600 parts In-Stock

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$0.426

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$0.426

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Bristol Electronics

USA . 1,293 parts In-Stock

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$0.938

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$0.375

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$0.263

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$0.244

1,293

$0.938

$0.375

$0.263

$0.244

Vyrian

USA . 6,772 parts In-Stock

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Chip Stock

USA . 6,088 parts In-Stock

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Microfarads

USA . 1,969 parts In-Stock

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ComSIT Distribution GmbH

Germany . 1,950 parts In-Stock

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ComSIT USA

USA . 1,950 parts In-Stock

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VNN

France . 636 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 150 parts In-Stock

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MISTER SPROCKETS

USA . 82 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 50 parts In-Stock

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50

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Inventory MP

USA . 34 parts In-Stock

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34

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LittleDiode

UK . 18 parts In-Stock

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Prism Electronics

USA . 9 parts In-Stock

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9

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Sensible Micro Corp

USA . 1 parts In-Stock

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1

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 6,654 parts In-Stock

1+ parts

$0.367

100+ parts

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6,654

$0.367

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Corphita

USA . 488 parts In-Stock

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$0.389

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488

$0.389

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Corohmni

South Africa . 239 parts In-Stock

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$0.417

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239

$0.417

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Argo Parts USA

USA . 3,346 parts In-Stock

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$0.426

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$0.413

3,346

$0.426

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$0.413

Netroflash

USA . 500 parts In-Stock

1+ parts

$0.426

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1k+ parts

$0.404

10k+ parts

$0.396

500

$0.426

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$0.404

$0.396

Aztec Data Supply Inc.

USA . 1,103 parts In-Stock

1+ parts

$0.977

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1,103

$0.977

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Advanced Electronics

New Zealand . 20 parts In-Stock

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$1.369

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$1.246

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$1.123

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20

$1.369

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AZTECH Wire

Italy . 71 parts In-Stock

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$18.540

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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Perfect Parts

USA . 16,149 parts In-Stock

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TANS Electronics

Latvia . 8,025 parts In-Stock

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SupplyDigital Components

Austria . 7,932 parts In-Stock

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Kulean Microsystems

USA . 5,735 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,388 parts In-Stock

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5,388

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Problanco Electronics

Mexico . 2,761 parts In-Stock

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2,761

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Continental Prestige Electronics

USA . 753 parts In-Stock

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$0.390

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753

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$0.390

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UHIMA Technologies

Türkiye . 745 parts In-Stock

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745

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Cyclops Electronics Ltd (Excess)

UK . 249 parts In-Stock

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249

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Glotronic Ltd.

UK . 120 parts In-Stock

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120

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Allen Electronics Distributors

USA . 10 parts In-Stock

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$0.347

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$0.308

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10

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$0.347

$0.308

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Overview

Upgrade your power switching game with the 2N6109G by Onsemi! As a leading manufacturer in the industry, Onsemi guarantees top-notch quality and reliability. The 2N6109G, a power bipolar junction transistor (BJT), offers unparalleled performance for a variety of applications. Its single configuration and high power dissipation of up to 40 W make it perfect for demanding switching tasks. With a maximum collector-emitter voltage of 50 V and a nominal transition frequency of 10 MHz, this transistor delivers outstanding results. Plus, its plastic/epoxy package body material ensures durability and ease of use. Don't miss out on the value, benefits, and advantages that the 2N6109G brings to your projects. Upgrade today and experience the Onsemi difference!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/Epoxy material provides good thermal conductivity and electrical insulation, making the transistor reliable and durable.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching applications, making this transistor suitable for various switching applications.

Configuration: SINGLE

Single configuration simplifies the circuit design and makes it easier to integrate into different electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance and efficiency when used in switching circuits.

Maximum Power Dissipation (Abs): 40 W

With a high maximum power dissipation, this transistor can handle high power levels without overheating or getting damaged.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage rating makes this transistor suitable for applications requiring higher voltage handling capabilities.

Maximum Collector Current (IC): 7 A

Capable of handling high collector currents, making it suitable for applications that require higher current capabilities.

Nominal Transition Frequency (fT): 10 MHz

High transition frequency ensures fast switching speeds, making this transistor ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N6109G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LEADFORM OPTIONS ARE AVAILABLE

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

7 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N6109G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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