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2N5883G

Onsemi

2N5883G by Onsemi

Onsemi's 2N5883G is a PNP BJT with max. collector current of 25A and power dissipation of 200W. Ideal for switching applications, it operates at up to 200°C with a max. VCE of 60V. The transistor features a single configuration in round package style, making it suitable for high-power electronic systems.

Median Price

$5.710

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 40 parts In-Stock

1+ parts

$5.710

100+ parts

$5.600

1k+ parts

$5.480

10k+ parts

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40

$5.710

$5.600

$5.480

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Distributors (In-Stock)

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Digiode

USA . 1,866 parts In-Stock

1+ parts

$4.256

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1,866

$4.256

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Vyrian

USA . 6,833 parts In-Stock

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6,833

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Flip Electronics

USA . 1,500 parts In-Stock

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1,500

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Distributors (Availability)

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Corphita

USA . 1,899 parts In-Stock

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$4.032

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1,899

$4.032

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Corohmni

South Africa . 434 parts In-Stock

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$4.480

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434

$4.480

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AZTECH Wire

Italy . 506 parts In-Stock

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$13.580

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506

$13.580

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Native Components

USA . 574 parts In-Stock

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$15.160

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574

$15.160

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Northwest PG Solutions

USA . 2,238 parts In-Stock

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$16.676

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$15.008

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2,238

$16.676

$15.008

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Microchip USA

USA . 410 parts In-Stock

1+ parts

$30.290

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$30.100

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$30.010

10k+ parts

$29.920

410

$30.290

$30.100

$30.010

$29.920

SupplyDigital Components

Austria . 4,735 parts In-Stock

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Problanco Electronics

Mexico . 2,306 parts In-Stock

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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TANS Electronics

Latvia . 1,767 parts In-Stock

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Kulean Microsystems

USA . 1,487 parts In-Stock

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Perfect Parts

USA . 844 parts In-Stock

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844

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UHIMA Technologies

Türkiye . 584 parts In-Stock

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584

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Overview

Unleash the power of innovation with the 2N5883G by Onsemi, a top-of-the-line Power Bipolar Junction Transistor designed for high-performance switching applications. Crafted with precision and expertise by Onsemi, this PNP transistor offers unrivaled reliability and efficiency, making it the ideal choice for your electronic projects. With a maximum power dissipation of 200 W and a maximum collector current of 25 A, the 2N5883G guarantees optimal performance even in the most demanding conditions. Upgrade your designs with this cutting-edge transistor and experience the difference in quality and performance that Onsemi delivers.

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides good thermal conductivity, helping to dissipate heat efficiently and increasing the overall reliability and longevity of the transistor.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching applications, making this transistor suitable for a variety of switch circuits.

Configuration: SINGLE

Single configuration makes it easy to integrate into circuits and simplifies the design process.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance and efficiency in such scenarios.

Maximum Power Dissipation (Abs): 200 W

High power dissipation capability allows the transistor to handle large amounts of power, making it suitable for high-power applications.

Maximum Collector-Emitter Voltage: 60 V

High collector-emitter voltage rating provides flexibility in circuit design and allows for operation in a wide range of voltage levels.

Maximum Collector Current (IC): 25 A

High collector current rating enables the transistor to handle large currents, making it suitable for high-current applications.

Nominal Transition Frequency (fT): 4 MHz

High transition frequency allows for fast switching speeds, making it ideal for applications requiring quick response times.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N5883G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

4

JEDEC-95 Code:

TO-204AA

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5883G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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