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2N5884

Texas Instruments

2N5884 by Texas Instruments

2N5884 by Texas Instruments is a PNP BJT transistor with 80V VCE, 20A IC, and 200W power dissipation. Ideal for switching applications due to its high current and voltage ratings. Features a single configuration in a round package suitable for flange mount installations.

Median Price

$6.119

Lifecycle Status

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40

In-Stock Inventory

1k+

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Verical

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Nova Conductors

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TEDSS.com

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Forefront Electronics and Design

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Electro Sonic

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IDEA Electronic Components Group

UK . 3,511 parts In-Stock

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$0.624

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$0.561

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DigiPath Technology Company

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Corohmni

South Africa . 217 parts In-Stock

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Continental Prestige Electronics

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Argo Parts USA

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AZTECH Wire

Italy . 705 parts In-Stock

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Overview

Enhance your power management solutions with the 2N5884 by Texas Instruments. Known for their superior quality and reliability, Texas Instruments delivers top-notch Power Bipolar Junction Transistors like no other. Ideal for switching applications, this PNP transistor offers a maximum collector-emitter voltage of 80V and a maximum collector current of 20A, ensuring optimal performance in various electronic devices. Upgrade your projects with the 2N5884 and experience unparalleled efficiency and durability.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides good thermal conductivity and durability, ensuring efficient heat dissipation and long-term reliability.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching applications, making this product suitable for a wide range of switching circuits.

Configuration: SINGLE

Single BJT configuration simplifies circuit design and integration, making it easier to use in various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor ensures fast switching speeds and low power loss, making it ideal for efficient power management.

Maximum Power Dissipation (Abs): 200 W

High power dissipation capability allows this transistor to handle high current loads and operate reliably in demanding conditions.

Maximum Collector-Emitter Voltage: 80 V

Suitable for applications requiring moderate voltage handling capabilities, making it versatile for a range of electronic circuits.

Maximum Collector Current (IC): 20 A

High collector current rating allows this transistor to handle significant current flow, making it suitable for power amplification and switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N5884 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-3

JESD-30 Code:

O-MBFM-P2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5884 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-432-9467, 5961004329467, 5961-01-082-1986, 5961010821986, 5961-00-375-0273, 5961003750273, 5961-01-017-6020, 5961010176020, 5961-01-116-1285, 5961011161285, 5961-14-459-4191, 5961144594191

NIIN

004329467, 010821986, 003750273, 010176020, 011161285, 144594191

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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