Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Power Bipolar Junction Transistors (BJT) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as power supplies, motor drives, and welding equipment.The Power BJT is a three-layer device that consists of an emitter, base, and collector region. The emitter and collector are heavily doped, while the base region is lightly doped. The power BJT works by controlling the flow of majority charge carriers (electrons or holes) from the emitter to the collector region through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.Power BJTs are designed to handle high current and voltage levels, and have a low on-resistance and high gain. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.Proper selection and use of Power BJTs are critical to ensure safe and reliable operation of power electronics systems. Power BJTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.
Add filters
All
Selected
FZT657QTA
Diodes Incorporated
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 30 MHz; Maximum Collector Current (IC): .5 A; Additional Features: HIGH RELIABILITY;
HIGH RELIABILITY
COLLECTOR
.5 A
300 V
SINGLE
50
R-PDSO-G4
e3
1
4
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
NPN
AEC-Q101
YES
MATTE TIN
GULL WING
DUAL
SILICON
30 MHz
FZT795AQTA
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; No. of Terminals: 4;
140 V
100
PNP
30
SWITCHING
100 MHz
FZT949QTA
FZT949QTA by Diodes Inc. is a PNP BJT with max. VCE of 30V and IC of 5.5A, ideal for automotive applications due to AEC-Q101 standard compliance. Featuring hFE of 75 and fT of 100MHz, it's designed for surface mount in small outline packages with Gull Wing terminals.
5.5 A
30 V
75
Matte Tin (Sn)
FZT690BQTA
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): 3 A; Terminal Finish: MATTE TIN;
3 A
45 V
150 MHz
2SA1962O(Q)
Toshiba
Toshiba's 2SA1962O(Q) is a PNP BJT transistor with max. power dissipation of 130W, max. collector-emitter voltage of 230V, and max. collector current of 15A. Ideal for amplifier applications due to its single configuration and silicon element material, it operates at up to 150°C temperature with a nominal transition frequency of 30MHz.
15 A
230 V
80
R-PSFM-T3
3
150 Cel
FLANGE MOUNT
130 W
Other Transistors
NO
THROUGH-HOLE
AMPLIFIER
2SC5242O(Q)
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 30 MHz; Maximum Power Dissipation (Abs): 130 W; Maximum Collector Current (IC): 15 A;
FZT600BQTA
NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 2 A;
2 A
15 pF
DARLINGTON
5000
-55 Cel
3 W
250 MHz
1.2 V
TTC5460B,Q(S
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 5.5 MHz; Maximum Collector Current (IC): .05 A; Package Body Material: PLASTIC/EPOXY;
.05 A
800 V
15
TO-126
5.5 MHz
NJVMJD122T4G-VF01
Onsemi
NJVMJD122T4G-VF01 by Onsemi is a NPN BJT with Darlington configuration, hFE of 100, and VCE of 100V. Ideal for amplifier applications, it operates b/w -65 to 150°C with IC up to 8A. Suitable for surface mount with Gull Wing terminals in a small outline package.
8 A
100 V
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
R-PSSO-G2
2
-65 Cel
NJVMJD148T4G-VF01
NJVMJD148T4G-VF01 by Onsemi is a NPN BJT transistor with hFE of 30, VCEO of 45V, and IC of 4A. Ideal for amplifier applications, it operates b/w -55 to 150 °C. This small outline package has Gull Wing terminals and is AEC-Q101 compliant.
4 A
Matte Tin (Sn) - annealed
3 MHz
NJVMJD253T4G-VF01
NJVMJD253T4G-VF01 by Onsemi is a PNP BJT transistor with hFE of 15, VCEO of 100V, and IC of 4A. Ideal for amplifier applications, it operates b/w -65 to 150°C with a fT of 40MHz. Suitable for surface mount designs in automotive electronics per AEC-Q101 standard.
40 MHz
NJVMJD32CT4G-VF01
NJVMJD32CT4G-VF01 by Onsemi is a PNP power bipolar junction transistor (BJT) with a max collector-emitter voltage of 100V and a max collector current of 3A. It is commonly used as an amplifier in various applications due to its small outline package style, high transition frequency of 3MHz, and wide operating temperature range from -65°C to 150°C.
10
NJVMJD44H11RLG-VF01
NJVMJD44H11RLG-VF01 by Onsemi is a NPN BJT transistor with 80V VCE, 8A IC, and 85MHz fT. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and small outline package style.
80 V
40
85 MHz
NJVMJD45H11RLG-VF01
NJVMJD45H11RLG-VF01 by Onsemi is a PNP BJT transistor for switching applications. It has a hFE of 40, Vce of 80V, and Ic of 8A. Ideal for small outline packages in automotive electronics due to AEC-Q101 compliance and fT of 90MHz.
90 MHz
NSV1C300ET4G-VF01
NSV1C300ET4G-VF01 by Onsemi is a PNP BJT transistor for switching applications. It has a hFE of 50, Vce of 100V, and Ic of 3A. Ideal for small outline packages in automotive electronics due to AEC-Q101 compliance and high transition frequency of 100MHz.
NSV1C301ET4G-VF01
NSV1C301ET4G-VF01 by Onsemi is a NPN BJT transistor for switching applications. It has a hFE of 80, VCE of 100V, and IC of 3A. Ideal for small outline packages in automotive electronics due to AEC-Q101 compliance.
120 MHz
2SC5171,Q(J
2SC5171,Q(J by Toshiba is a NPN BJT transistor with max. Vce of 180V and max. Ic of 2A. It has hFE of 50, ideal for amplifier applications due to its high transition frequency of 200MHz. The package style is flange mount with through-hole terminals in a rectangular shape, making it suitable for various electronic designs.
ISOLATED
180 V
200 MHz
BSR41F
Nexperia
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Case Connection: COLLECTOR;
1 A
60 V
TO-243AA
R-PSSO-F3
TIN
FLAT
PBSS5350Z/ZLF
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 3 A; No. of Elements: 1;
50 V
200
PBSS5540Z/ZLF
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 120 MHz; Maximum Collector Current (IC): 5 A; Reference Standard: IEC-60134;
5 A
40 V
250
IEC-60134
PBSS5540Z/ZLX
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 120 MHz; Maximum Collector Current (IC): 5 A; Package Style (Meter): SMALL OUTLINE;
PZT2907A/ZLF
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; No. of Terminals: 4;
.6 A
IEC-134
PZT2907A/ZLX
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Reference Standard: IEC-134;
PZTA44/ZLX
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 20 MHz; Maximum Collector Current (IC): .3 A; No. of Elements: 1;
.3 A
400 V
20 MHz
BSR30F
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Transistor Application: SWITCHING;
AEC-Q101; IEC-60134
PHPT61002NYCLHX
PHPT61002NYCLHX by Nexperia is a NPN BJT transistor for switching applications. It has VCEsat of 0.3V, hFE of 20, and IC of 2A. With a max operating temperature of 175°C, it is ideal for high-power dissipation in small outline packages.
11 pF
20
MO-235
R-PSSO-G4
175 Cel
25 W
140 MHz
.3 V
2N3716PBFREE
Central Semiconductor
2N3716PBFREE by Central Semiconductor is a NPN power bipolar junction transistor (BJT) with a max collector-emitter voltage of 80V and a max collector current of 10A. It is commonly used for switching applications due to its fast rise and fall times of 400ns.
10 A
400 ns
TO-3
O-MBFM-P2
200 Cel
METAL
ROUND
150 W
MATTE TIN OVER NICKEL
PIN/PEG
BOTTOM
4 MHz
700 ns
.8 V
2N4237PBFREE
2N4237PBFREE by Central Semiconductor is a NPN BJT transistor with VCEsat of 0.6V, hFE of 30, and IC of 3A. Ideal for switching applications due to its low saturation voltage and high collector current capacity. Operates in temperatures ranging from -65°C to 200°C, making it suitable for various industrial uses.
100 pF
TO-39
O-MBCY-W3
CYLINDRICAL
6 W
WIRE
2 MHz
.6 V
TIP29CPBFREE
TIP29CPBFREE by Central Semiconductor is a NPN BJT transistor with VCEsat of 0.7V, hFE of 15, and IC of 1A. Ideal for switching applications, it has a max power dissipation of 30W and operates b/w -65 to 150°C. Its through-hole terminals make it suitable for various electronic devices.
TO-220AB
2 W
30 W
.7 V
2N6055PBFREE
2N6055PBFREE by Central Semiconductor is a NPN Darlington BJT with max. collector-emitter voltage of 60V and max. collector current of 8A. It has a min DC current gain of 100, making it ideal for switching applications in various industries due to its high transition frequency of 4MHz and wide operating temperature range from -65°C to 200°C.
2N6107PBFREE
2N6107PBFREE by Central Semiconductor is a PNP BJT with hFE of 30, VCEO of 70V, and IC of 7A. Ideal for switching applications due to its single configuration and silicon element material. Features flange mount style with through-hole terminals in a rectangular package shape.
7 A
70 V
MPQ2222APBFREE
MPQ2222APBFREE by Central Semiconductor is a NPN Power BJT with 4 separate elements. It has a max VCEsat of 0.3V, ideal for switching applications. With a max VCE of 40V and fT of 200MHz, it's suitable for high-speed circuits in various electronic devices.
8 pF
SEPARATE, 4 ELEMENTS
TO-116
R-PDIP-T14
14
IN-LINE
2N6052PBFREE
2N6052PBFREE by Central Semiconductor is a PNP Darlington power BJT with a max VCEsat of 3V. It is used for switching applications and has a max collector-emitter voltage of 100V.
12 A
500 pF
3 V
MJE13005PBFREE
MJE13005PBFREE by Central Semiconductor is a NPN BJT transistor for switching applications. It has VCEsat of 1V, IC of 4A, and hFE of 8. With max power dissipation of 75W, it operates b/w -65 to 150°C. Ideal for high-power switching circuits due to its fast rise/fall times and low collector-emitter voltage drop.
130 pF
8
900 ns
75 W
4900 ns
800 ns
1 V
2N3053APBFREE
2N3053APBFREE by Central Semiconductor is a NPN BJT with VCEsat of 0.3V, hFE of 50, and IC of 0.7A. Ideal for power applications, it has a max operating temp of 200°C and fT of 100MHz. With a collector-emitter voltage of 60V, it suits various electronic designs requiring high power dissipation up to 5W.
.7 A
5 W
ZXTP01500BGQTA
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 60 MHz; Maximum Collector Current (IC): .15 A; Minimum DC Current Gain (hFE): 80;
.15 A
500 V
60 MHz
BCP68-25H6327
Infineon Technologies
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Minimum DC Current Gain (hFE): 60;
20 V
60
NOT SPECIFIED
TIP112PBFREE
TIP112PBFREE by Central Semiconductor is a NPN Darlington BJT with 2.5V VCEsat, 50W power dissipation, and 100V VCEO. Ideal for amplifier applications, it has a hFE of 500 and operates b/w -65 to 150 °C. Package style is flange mount with matte tin over nickel finish in a rectangular shape with through-hole terminals.
500
50 W
25 MHz
2.5 V
TIP112TIN/LEAD
TIP112TIN/LEAD by Central Semiconductor is a NPN Darlington BJT with max VCEsat of 2.5V, hFE of 500, and IC of 2A. Ideal for amplifier applications, it operates b/w -65 to 150°C with a max power dissipation of 50W in a plastic package style.
e0
TIN LEAD
2DA1971Q-7
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 75 MHz; Maximum Collector Current (IC): .5 A; Transistor Element Material: SILICON;
140
75 MHz
ZXTN19020DZQTA
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 160 MHz; Maximum Collector Current (IC): 7.5 A; Package Body Material: PLASTIC/EPOXY;
7.5 A
160 MHz
2SAR587D3TL1
ROHM
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 10 W; Maximum Collector Current (IC): 3 A;
65 pF
120 V
120
TO-252
10 W
.2 V
2SB1203T-H
The Onsemi 2SB1203T-H is a NPN Power BJT with max VCEsat of 0.4V, IC of 5A, and hFE of 35. Ideal for switching applications due to its high transition frequency of 180MHz and low collector-emitter voltage of 50V. The transistor comes in a plastic/epoxy package with through-hole terminals, making it suitable for various power electronics designs.
40 pF
35
R-PSIP-T3
e6
1 W
20 W
TIN BISMUTH
180 MHz
.4 V
BCP56-16-AU_R2_000A1
Panjit International
Panjit International's BCP56-16-AU_R2_000A1 is a NPN Power BJT with 100V VCE, 1A IC, and 40 hFE. Ideal for AEC-Q101 compliant automotive applications due to its small outline package and high transition frequency of 100MHz.
BCX56-16-AU_R1_000A1
BCX56-16-AU_R1_000A1 by Panjit Int. is a NPN BJT transistor with hFE of 40, VCE of 100V, and IC of 1A. It operates b/w -55°C to 150°C, suitable for power applications in automotive electronics meeting AEC-Q101 standards.
BCP5610QTA
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;
25 pF
25
.5 V
BCP5610QTC
ZXTP19040CGQ-7
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 3 A;
© 2023 All rights reserved
