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NJVMJD44H11RLG-VF01

Onsemi

NJVMJD44H11RLG-VF01 by Onsemi

NJVMJD44H11RLG-VF01 by Onsemi is a NPN BJT transistor with 80V VCE, 8A IC, and 85MHz fT. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and small outline package style.

Median Price

$0.362

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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Flip Electronics (Authorized)

USA . 10,800 parts In-Stock

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Nova Conductors

Japan . 64 parts In-Stock

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$0.380

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64

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Flip Electronics

USA . 11,000 parts In-Stock

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Cyclops Electronics Ltd

UK . 10,800 parts In-Stock

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Vyrian

USA . 5,776 parts In-Stock

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IBS Electronics

USA . 1,800 parts In-Stock

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$0.344

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Digiode

USA . 254 parts In-Stock

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Corohmni

South Africa . 115 parts In-Stock

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$0.372

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Continental Prestige Electronics

USA . 4,137 parts In-Stock

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$0.380

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$0.372

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$0.380

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$0.372

Argo Parts USA

USA . 3,090 parts In-Stock

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$0.380

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$0.369

3,090

$0.380

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$0.369

Netroflash

USA . 1,000 parts In-Stock

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$0.380

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Ampacity Inc.

Singapore . 10,684 parts In-Stock

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$4.050

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AZTECH Wire

Italy . 642 parts In-Stock

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RC Electronics

USA . 74,710 parts In-Stock

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Lixinc

USA . 9,502 parts In-Stock

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Problanco Electronics

Mexico . 8,020 parts In-Stock

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SupplyDigital Components

Austria . 7,350 parts In-Stock

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GreenTree Electronics

Israel . 7,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 5,527 parts In-Stock

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TANS Electronics

Latvia . 3,234 parts In-Stock

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Kulean Microsystems

USA . 2,883 parts In-Stock

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Authorized Procurement Solutions

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Corphita

USA . 1,810 parts In-Stock

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UHIMA Technologies

Türkiye . 103 parts In-Stock

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Overview

Enhance the performance of your electronic devices with the NJVMJD44H11RLG-VF01 Power Bipolar Junction Transistor by Onsemi. Manufactured with precision and expertise, this NPN transistor offers unparalleled reliability and efficiency for switching applications. Its small outline package design makes it ideal for space-constrained projects, while its high collector-emitter voltage and current ratings ensure optimal functionality. Trust in Onsemi's commitment to quality and innovation, and experience the difference that the NJVMJD44H11RLG-VF01 can make in your projects. Upgrade your electronics today and see the results firsthand!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-lasting performance.

Polarity or Channel Type: NPN

Suitable for a wide range of applications, offering versatility in circuit designs.

Configuration: SINGLE

Simplified circuit layout and design, making installation and maintenance easier.

Transistor Application: SWITCHING

Ideal for switching applications, offering fast response times and efficient performance.

Surface Mount: YES

Allows for compact and space-saving PCB designs, suitable for modern electronics.

Package Shape: RECTANGULAR

Fits well into standard PCB layouts, ensuring compatibility with existing designs.

Terminal Form: GULL WING

Facilitates easy soldering and mounting on the PCB, enhancing the overall assembly process.

No. of Terminals: 2

Simplified connections and reduced complexity in circuit designs.

Package Style (Meter): SMALL OUTLINE

Compact form factor, suitable for applications with space constraints.

Minimum DC Current Gain (hFE): 40

Ensures stable and reliable amplification of the input signal.

Maximum Collector-Emitter Voltage: 80 V

Provides a high voltage tolerance, suitable for a variety of circuit configurations.

Transistor Element Material: SILICON

Offers high-performance characteristics and reliability, ensuring consistent operation.

Maximum Collector Current (IC): 8 A

Capable of handling high current loads, suitable for power applications.

Terminal Finish: Matte Tin (Sn) - annealed

Improves solderability and ensures a reliable electrical connection.

Terminal Position: SINGLE

Simplified connections and reduced chances of error in circuit assembly.

Case Connection: COLLECTOR

Facilitates easy integration into the circuit layout, ensuring proper connectivity.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper soldering and reflow process for the transistor, preventing damage.

Peak Reflow Temperature °C: 260

Suitable for high-temperature soldering processes, ensuring a reliable connection.

Reference Standard: AEC-Q101

Complies with automotive industry standards, suitable for automotive applications.

Nominal Transition Frequency (fT): 85 MHz

Provides high-frequency performance, suitable for high-speed switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NJVMJD44H11RLG-VF01 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NJVMJD44H11RLG-VF01 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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