Loading...

NSV1C301ET4G-VF01

Onsemi

NSV1C301ET4G-VF01 by Onsemi

NSV1C301ET4G-VF01 by Onsemi is a NPN BJT transistor for switching applications. It has a hFE of 80, VCE of 100V, and IC of 3A. Ideal for small outline packages in automotive electronics due to AEC-Q101 compliance.

Median Price

$0.678

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 672 parts In-Stock

1+ parts

$1.210

100+ parts

$0.499

1k+ parts

$0.388

10k+ parts

-

672

$1.210

$0.499

$0.388

-

Element14

Singapore . 1,440 parts In-Stock

1+ parts

-

100+ parts

$0.678

1k+ parts

$0.482

10k+ parts

$0.392

1,440

-

$0.678

$0.482

$0.392

Farnell

UK . 509 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.288

10k+ parts

-

509

-

-

$0.288

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.335

100+ parts

-

1k+ parts

-

10k+ parts

-

100

$0.335

-

-

-

Digiode

USA . 1,445 parts In-Stock

1+ parts

$0.893

100+ parts

-

1k+ parts

-

10k+ parts

-

1,445

$0.893

-

-

-

Infinite Electronics LLP

India . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

15,000

-

-

-

-

Vyrian

USA . 3,403 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,403

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 150 parts In-Stock

1+ parts

$0.328

100+ parts

-

1k+ parts

-

10k+ parts

-

150

$0.328

-

-

-

Netroflash

USA . 500 parts In-Stock

1+ parts

$0.335

100+ parts

$0.328

1k+ parts

-

10k+ parts

-

500

$0.335

$0.328

-

-

Ampacity Inc.

Singapore . 778 parts In-Stock

1+ parts

$0.530

100+ parts

-

1k+ parts

-

10k+ parts

-

778

$0.530

-

-

-

Continental Prestige Electronics

USA . 1,810 parts In-Stock

1+ parts

$0.738

100+ parts

$0.437

1k+ parts

$0.271

10k+ parts

-

1,810

$0.738

$0.437

$0.271

-

Corphita

USA . 452 parts In-Stock

1+ parts

$0.846

100+ parts

-

1k+ parts

-

10k+ parts

-

452

$0.846

-

-

-

Andel Nordic

Denmark . 784 parts In-Stock

1+ parts

$1.230

100+ parts

-

1k+ parts

$0.858

10k+ parts

$0.858

784

$1.230

-

$0.858

$0.858

Lixinc

USA . 17,719 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

17,719

-

-

-

-

TANS Electronics

Latvia . 4,060 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,060

-

-

-

-

Kulean Microsystems

USA . 2,808 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,808

-

-

-

-

Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

UHIMA Technologies

Türkiye . 914 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

914

-

-

-

-

Problanco Electronics

Mexico . 549 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

549

-

-

-

-

Microchip USA

USA . 430 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

430

-

-

-

-

SupplyDigital Components

Austria . 350 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

350

-

-

-

-

Overview

Unlock the power of reliable and efficient switching applications with the NSV1C301ET4G-VF01 by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-notch quality and performance in their Power Bipolar Junction Transistors (BJT). Ideal for a wide range of applications, this NPN transistor offers customers unparalleled value with its high DC current gain and maximum collector-emitter voltage. Trust Onsemi to deliver innovative solutions that exceed expectations and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - Provides durability and protection for the transistor.

Polarity or Channel Type:

NPN - Offers versatility for various circuit applications.

Configuration:

SINGLE - Simplifies circuit design and integration.

Transistor Application:

SWITCHING - Ideal for use in switching applications for efficient performance.

Surface Mount:

YES - Allows for easy installation and space-saving on PCBs.

Package Shape:

RECTANGULAR - Facilitates compact layout in circuit design.

Terminal Form:

GULL WING - Enhances soldering reliability and ease of assembly.

No. of Terminals:

2 - Streamlines connections and reduces complexity in circuitry.

Package Style (Meter):

SMALL OUTLINE - Saves space and allows for high component density in layouts.

Minimum DC Current Gain (hFE):

80 - Ensures reliable and consistent amplification capabilities.

Maximum Collector-Emitter Voltage:

100 V - Provides a high voltage tolerance for robust performance.

Transistor Element Material:

SILICON - Offers high efficiency and reliability in operation.

Maximum Collector Current (IC):

3 A - Supports high power applications with ease.

Terminal Finish:

Matte Tin (Sn) - annealed - Ensures reliable electrical connections and solderability.

Terminal Position:

SINGLE - Simplifies circuit connections and reduces complexity.

Case Connection:

COLLECTOR - Facilitates efficient heat dissipation and thermal management.

Maximum Time At Peak Reflow Temperature (s):

30 - Enables safe and effective soldering during assembly.

Peak Reflow Temperature °C:

260 - Ensures proper solder melting for secure connections.

Reference Standard:

AEC-Q101 - Complies with automotive industry standards for quality and reliability.

Nominal Transition Frequency (fT):

120 MHz - Provides high-speed performance for rapid switching operations.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NSV1C301ET4G-VF01 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NSV1C301ET4G-VF01 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 5